RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power Field Effect Transis

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RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power LDMOS Transistors

RF Power LDMOS Transistors

Airfast RF Power LDMOS Transistor

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor