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MC1407价格

参考价格：￥0.6300

型号：MC14070BDG 品牌：ONSemi 备注：这里有MC1407多少钱，2025年最近7天走势，今日出价，今日竞价，MC1407批发/采购报价，MC1407行情走势销售排行榜，MC1407报价。

型号	功能描述	生产厂家企业	LOGO
MC14070B	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BCP	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BCPG	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BD	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BDG	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BDR2	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BDR2G	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14070BFEL	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14071B	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071B	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14071BCL	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14071BCP	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14071BCP	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BCPG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BD	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BD	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14071BDG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BDR2	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BDR2G	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BDT	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BDTG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BDTR2	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BDTR2G	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BFEL	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14071BFELG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14072B	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14072BCL	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14072BCP	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14072BD	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14073B	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14073B	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BCL	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14073BCP	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14073BCP	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BCPG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BD	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BD	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14073BDG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BDR2	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BDR2G	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BFEL	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14073BFELG	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V	ONSEMI 安森美半导体	ONSEMI
MC14075B	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14075BCL	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14075BCP	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14075BD	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14076B	4-Bit D-Type Register with Three-State Outputs The MC14076B 4−Bit Register consists of four D−type flip−flops operating synchronously from a common clock. OR gated output−disable inputs force the outputs into a high−impedance state for use in bus organized systems. OR gated data−disable inputs cause the Q outputs to be fed back to the D inputs	ONSEMI 安森美半导体	ONSEMI
MC14076BCP	4-Bit D-Type Register with Three-State Outputs The MC14076B 4−Bit Register consists of four D−type flip−flops operating synchronously from a common clock. OR gated output−disable inputs force the outputs into a high−impedance state for use in bus organized systems. OR gated data−disable inputs cause the Q outputs to be fed back to the D inputs	ONSEMI 安森美半导体	ONSEMI
MC14076BD	4-Bit D-Type Register with Three-State Outputs The MC14076B 4−Bit Register consists of four D−type flip−flops operating synchronously from a common clock. OR gated output−disable inputs force the outputs into a high−impedance state for use in bus organized systems. OR gated data−disable inputs cause the Q outputs to be fed back to the D inputs	ONSEMI 安森美半导体	ONSEMI
MC14076BDR2	4-Bit D-Type Register with Three-State Outputs The MC14076B 4−Bit Register consists of four D−type flip−flops operating synchronously from a common clock. OR gated output−disable inputs force the outputs into a high−impedance state for use in bus organized systems. OR gated data−disable inputs cause the Q outputs to be fed back to the D inputs	ONSEMI 安森美半导体	ONSEMI
MC14077BCP	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14077BCPG	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14077BD	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14077BDR2	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14077BDR2G	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14077BFEL	CMOS SSI The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de	ONSEMI 安森美半导体	ONSEMI
MC14078B	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14078BCL	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14078BCP	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola
MC14078BD	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered	Motorola 摩托罗拉	Motorola

替换型号	功能描述	生产厂家企业	LOGO
CD4070BCN	Quad 2-Input EXCLUSIVE-OR, NOR Gate	NSC 国半	NSC
CD4070BCN	Quad 2-Input EXCLUSIVE-OR Gate	Fairchild 仙童半导体	Fairchild
CD4070BCN	Quad 2-Input EXCLUSIVE-OR Gate	Fairchild 仙童半导体	Fairchild
CD4070BE	CMOS Quad Exclusive-OR and Exclusive-NOR Gate	HARRIS	HARRIS
CD4070BE	CMOS Quad Exclusive-OR and Exclusive-NOR Gate	TI 德州仪器	TI
CD4070BF	CMOS Quad Exclusive-OR and Exclusive-NOR Gate	TI 德州仪器	TI
CD4070BF	CMOS Quad Exclusive-OR and Exclusive-NOR Gate	HARRIS	HARRIS
HCC4070BF	GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HCF4070BF	GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14070B	Quadruple Exclusive-OR Gate, Quadruple Exclusive-NOR Gate	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HEF4070BD	Quadruple exclusive-OR gate	Philips 飞利浦	Philips
HEF4070BP	Quadruple exclusive-OR gate	Philips 飞利浦	Philips
MM74C86	Quad 2-Input EXCLUSIVE-OR Gate	NSC 国半	NSC
MM74C86	Quad 2-Input EXCLUSIVE-OR Gate	Fairchild 仙童半导体	Fairchild
NTE4070B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4070B	QUAD EXCLUSIVE - OR GATE	RANDE	RANDE

MC1407产品属性

类型
描述
型号
MC1407
制造商
Motorola Inc

MC1407供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MC14070BD	onsemi(安森美)	24+	SOP14	945	只做原装,提供一站式配单服务,代工代料。BOM配单	询价
上海意淼电子科技有限公司	MC14070B	MOT	23+	SOP14	20000	全新原装假一赔十	询价
千层芯半导体(深圳)有限公司	MC14070B	ON	24+	SOIC-14	25000	一级专营品牌全新原装热卖	询价
深圳市科恒伟业电子有限公司	MC14070BDR2G	ON	24+	SOP	7850	只做原装正品现货或订货假一赔十!	询价
深圳市赛美科科技有限公司	MC14070B/BCAJC	MOT		CDIP14	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市赛特兴科技有限公司	MC14070B	TI/德州仪器	QQ咨询	CDIP	825	全新原装研究所指定供货商	询价
深圳市昌和盛利电子有限公司	MC14070B	MOTOROLA	NEW	原厂封装	9526	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市正纳电子有限公司	MC14070BDR2G	ON	22+	SOIC-14	57500	原装正品可支持验货,欢迎咨询	询价
深圳市卓越微芯电子有限公司	MC14070BCL	MOT	25+		170	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市益百分电子有限公司	MC14070B	MOT	01+	SOP14	3960	全新原装进口自己库存优势	询价

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