MC1407价格

参考价格:¥0.6300

型号:MC14070BDG 品牌:ONSemi 备注:这里有MC1407多少钱,2025年最近7天走势,今日出价,今日竞价,MC1407批发/采购报价,MC1407行情走势销售排行榜,MC1407报价。
型号 功能描述 生产厂家&企业 LOGO 操作

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

4-BitD-TypeRegisterwithThree-StateOutputs

TheMC14076B4−BitRegisterconsistsoffourD−typeflip−flopsoperatingsynchronouslyfromacommonclock.ORgatedoutput−disableinputsforcetheoutputsintoahigh−impedancestateforuseinbusorganizedsystems.ORgateddata−disableinputscausetheQoutputstobefedbacktotheDinputs

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitD-TypeRegisterwithThree-StateOutputs

TheMC14076B4−BitRegisterconsistsoffourD−typeflip−flopsoperatingsynchronouslyfromacommonclock.ORgatedoutput−disableinputsforcetheoutputsintoahigh−impedancestateforuseinbusorganizedsystems.ORgateddata−disableinputscausetheQoutputstobefedbacktotheDinputs

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitD-TypeRegisterwithThree-StateOutputs

TheMC14076B4−BitRegisterconsistsoffourD−typeflip−flopsoperatingsynchronouslyfromacommonclock.ORgatedoutput−disableinputsforcetheoutputsintoahigh−impedancestateforuseinbusorganizedsystems.ORgateddata−disableinputscausetheQoutputstobefedbacktotheDinputs

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitD-TypeRegisterwithThree-StateOutputs

TheMC14076B4−BitRegisterconsistsoffourD−typeflip−flopsoperatingsynchronouslyfromacommonclock.ORgatedoutput−disableinputsforcetheoutputsintoahigh−impedancestateforuseinbusorganizedsystems.ORgateddata−disableinputscausetheQoutputstobefedbacktotheDinputs

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CMOSSSI

TheMC14070BquadexclusiveORgateandtheMC14077BquadexclusiveNORgateareconstructedwithMOSP−channelandN−channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisde

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
替换型号 功能描述 生产厂家&企业 LOGO 操作

Quad 2-Input EXCLUSIVE-OR, NOR Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

Quad 2-Input EXCLUSIVE-OR Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Quad 2-Input EXCLUSIVE-OR Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

CMOS Quad Exclusive-OR and Exclusive-NOR Gate

HARRISHarris Corporation

HARRIS

CMOS Quad Exclusive-OR and Exclusive-NOR Gate

TITexas Instruments

德州仪器美国德州仪器公司

TI

CMOS Quad Exclusive-OR and Exclusive-NOR Gate

TITexas Instruments

德州仪器美国德州仪器公司

TI

CMOS Quad Exclusive-OR and Exclusive-NOR Gate

HARRISHarris Corporation

HARRIS

GATES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

GATES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

Quadruple Exclusive-OR Gate, Quadruple Exclusive-NOR Gate

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Quadruple exclusive-OR gate

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Quadruple exclusive-OR gate

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Quad 2-Input EXCLUSIVE-OR Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

Quad 2-Input EXCLUSIVE-OR Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

COMPLEMENTARY METAL OXIDE SILICON

NTENTE Electronics

NTE

QUAD EXCLUSIVE - OR GATE

RANDER & E International, Inc.

RANDE

MC1407产品属性

  • 类型

    描述

  • 型号

    MC1407

  • 制造商

    Motorola Inc

更新时间:2025-6-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SOP16
940
只做原装,提供一站式配单服务,代工代料。BOM配单
ON
22+
SOP3.9
3000
原装正品,支持实单
MOT
23+
SOP16
4500
全新原装、诚信经营、公司现货销售!
MOTOROLA/摩托罗拉
24+
DIP-16
118
只做原厂渠道 可追溯货源
MC14076BCL
1293
1293
MOT
23+
DIP
5000
原装正品,假一罚十
A
24+
b
103
MOT
23+
SOP16
7566
原厂原装
onsemi
24+
16-PDIP
25000
in stock逻辑IC-原装正品
MOT
00+
SOP16
2036
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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  • ZFSWITCHES

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