CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI Quad Exclusive OR and NOR Gates

文件：134.01 Kbytes Page：7 Pages

CMOS SSI Quad Exclusive OR and NOR Gates

文件：134.01 Kbytes Page：7 Pages

CMOS SSI Quad Exclusive ?쏰R??and ?쏯OR??Gates

文件：126.28 Kbytes Page：7 Pages

封装/外壳：14-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC GATE XOR 4CH 2-INP SOEIAJ-14 集成电路（IC） 门和反相器

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de