B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Wireless Technology to Control and Monitor Anything from Anywhere

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Voltage Supervisor with I2C Serial CMOS EEPROM

文件：797.33 Kbytes Page：14 Pages

Voltage Supervisor with I2C Serial CMOS EEPROM

文件：750.8 Kbytes Page：14 Pages

Solid Tantalum Chip Capacitors, TANTAMOUNT

文件：287.82 Kbytes Page：19 Pages

Pulse Transformer

文件：17.02 Kbytes Page：1 Pages

CMOS NOR Gates

Dual 4-Input NOR(NAND) Gate

CMOS NOR Gates

CMOS NOR Gates

NOR GATE

Dual 4-input NOR Gate

Dual 4-input NOR gate

Dual 4-input NOR gate

COMPLEMENTARY METAL OXIDE SILICON

INPUT NOR GATE