60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —

COMPLEMENTARY SILICON POWER TRANSITORS

Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc • Pb−Free Pa

60 A, 80 V NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications..The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices. • High Current Capability - IC Continuous = 60 Amperes\n• DC Current Gain - hFE = 15-100 @ IC = 50 Adc\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc\n• Pb-Free Packages are Available;

MJ14002

文件：10.95 Kbytes Page：1 Pages

High?묬urrent Complementary Silicon Power Transistors

文件：96.22 Kbytes Page：5 Pages

isc Silicon NPN Darlington Power Transistor

文件：291.64 Kbytes Page：2 Pages

High-Current Complementary Silicon Power Transistors

文件：121.94 Kbytes Page：2 Pages

封装/外壳：TO-204AE 包装：散装 描述：TRANS NPN 80V 60A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High?묬urrent Complementary Silicon Power Transistors

文件：96.22 Kbytes Page：5 Pages

Dual 4-input NOR Gate

Dual 4-input NOR Gates

Dual 4-input NOR Gate

Dual 4-input NOR Gates

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered