DUAL GENERAL PURPOSE TRANSISTORS SWITCHING TRANSISTORS

DESCRIPTION The MBT3904 D device i s a spin off of our popular SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applic ations and is housed in the SC 88( SOT 363 six leaded surface mount package. By putting two discre te devices in one package , this device i

Dual General Purpose Transistors

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Dual General Purpose Transistor NPNNPN Silicon

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Switching transistors

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two d

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Gallium Arsenide CATV Integrated Amplifier Module

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

双通用晶体管

MBT3904DW1T1、MBT3904DW2T 和 MBT3906DW1T1 器件是我们受欢迎的 SOT-23/SOT-323 三引线器件的副产品。此双 NPN 双极晶体管适用于通用放大器应用，采用 SOT-363 六引线表面贴装封装。通过将两个分立器件放入一个封装中，此类器件适用于板空间非常宝贵的低功率表面贴装应用。 • hFE, 100-300\n• Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• Available in 8 mm, 7-inch/3,000 Unit Tape and Reel\n• Pb Free Packages are Available\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q;

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

Dual General Purpose Transistors

文件：105.62 Kbytes Page：7 Pages

Dual General Purpose Transistors

Dual General Purpose Transistors

文件：720.39 Kbytes Page：10 Pages

Dual General Purpose Transistors

文件：105.62 Kbytes Page：7 Pages

Dual General Purpose Transistors

文件：105.62 Kbytes Page：7 Pages

包装：卷带（TR） 描述：TRANS 2NPN 40V 0.2A SC88 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

Dual General Purpose Transistors

文件：105.62 Kbytes Page：7 Pages

Dual General Purpose Transistors

文件：105.62 Kbytes Page：7 Pages

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

General Purpose Transistor

General Purpose Transistor NPN Silicon

NPN switching transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: MPS3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification.

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching.