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MBRF20100价格
参考价格:¥20.7961
型号:MBRF20100CT 品牌:ON 备注:这里有MBRF20100多少钱,2025年最近7天走势,今日出价,今日竞价,MBRF20100批发/采购报价,MBRF20100行情走势销售排行榜,MBRF20100报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRF20100 | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | MCC | ||
MBRF20100 | SWITCHMODE??Schottky Power Rectifirers
| Motorola 摩托罗拉 | ||
MBRF20100 | Isolated 20.0 AMPS. Schottky Barrier Rectifiers Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency | TSC 台湾半导体 | ||
MBRF20100 | MBRF20100 SCHOTTKY RECTIFIER Features 150C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts ar | SMCDIODE 桑德斯微电子 | ||
MBRF20100 | 封装/外壳:TO-220-2 整包 包装:管件 描述:DIODE SCHOTTKY 20A 100V ITO220 分立半导体产品 二极管 - 整流器 - 单 | TSC 台湾半导体 | ||
MBRF20100 | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:632.26 Kbytes Page:2 Pages | KERSEMI | ||
MBRF20100 | 肖特基二极管 | SMC 桑德斯微电子 | ||
MBRF20100 | 肖特基二极管 | ETC 知名厂家 | ETC | |
MBRF20100 | 20A, 100V, Schottky Rectifier | TSC 台湾半导体 | ||
MBRF20100 | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:149.75 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF20100 | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:248.25 Kbytes Page:3 Pages | TSC 台湾半导体 | ||
MBRF20100 | Isolated Schottky Barrier Rectifiers 文件:218.36 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF20100 | Isolated 20.0AMP. Schottky Barrier Rectifiers 文件:214.11 Kbytes Page:2 Pages | LUGUANG 鲁光电子 | ||
MBRF20100 | Guard ring for enhanced ruggedness and long term reliability 文件:146.91 Kbytes Page:5 Pages | SMC 桑德斯微电子 | ||
Schottky Barrier Rectifier Description Using the schottky barrier principle with a refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical application are in switching mode power supplies such as adaptors, DC/DC | MULTICOMP 易络盟 | |||
Schottky Barrier Rectifier Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | Surge | |||
Isolated 20.0 AMPS. Schottky Barrier Rectifiers Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code | TSC 台湾半导体 | |||
Schottky Barrier Rectifier Features: • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss,high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 • For use in low voltage, high freque | MULTICOMP 易络盟 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | MCC | |||
Product Specification Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | Good-Ark 固锝电子 | |||
SWITCHMODE??Schottky Power Rectifirers
| Motorola 摩托罗拉 | |||
SWITCHMODE Schottky Power Rectifier The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Dual High-Voltage Schottky Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode High-Voltage Schottky Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s | VishayVishay Siliconix 威世威世科技公司 | |||
SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns. | KEC KEC(Korea Electronics) | |||
20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers Features ✧ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ✧ Metal silicon junction, majority carrier conduction ✧ Low power loss, high efficiency ✧ High current capability, low forward voltage drop ✧ High surge capability ✧ For use in low voltage, high freque | THINKISEMI 思祁半导体 | |||
Schottky Barrier Diode in a TO-220F Plastic Package Descriptions Schottky Barrier Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. | FOSHAN 蓝箭电子 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward v | CHENDA 辰达半导体 | |||
DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard rin | DSK | |||
SCHOTTKY RECTIFIER Features: • 175 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMC 桑德斯微电子 | |||
Schottky Diodes ■ Features ● Low forward voltage drop ● High frequency properties and switching speed ● Guard ring for over-voltage protection | KEXIN 科信电子 | |||
Dual High-Voltage Schottky Barrier Rectifiers FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in | SSC Silicon Standard Corp. | |||
20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Full Pack High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS | TAK_CHEONG 德昌电子 | |||
TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | |||
20A SCHOTTKY BARRIER RECTIFIER Features □ Low forward voltage drop □ High frequency properties and switching speed □ Guard ring for over-voltage protection | WISDOM | |||
SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ Metal silicon junction, majority carrier conduction. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ High current capa | BILIN 银河微电 | |||
SCHOTTKY BARRIER RECTIFIER everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e | DIOTECH | |||
SCHOTTKY BARRIER RECTIFIER everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e | DIOTECH | |||
20A SCHOTTKY BARRIER DIODE
| FORMOSA 美丽微半导体 | |||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● Metal of silicon rectifier | HY 虹扬科技 | |||
Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body | DACHANG 大昌电子 | |||
Schottky Barrier Rectifier FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequ | ISC 无锡固电 | |||
MBRF20100CT SCHOTTKY RECTIFIER Features Applications 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
Dual SchottkyBarrierRectifiers ReverseVoltage 100V Volts ForwardCurrent 20.0Amperes egatloVesreveR 100V Volts serepmA0.02tnerruCdrawroF Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardr | FS | |||
20A High Power Schottky Barrier Rectifiersnull ■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, | CITC 竹懋科技 | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency | DYELEC 迪一电子 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELEC 迪一电子 | |||
Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
Dual Common-Cathode High-Voltage Schottky Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode High-Voltage Schottky Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世威世科技公司 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 | |||
SWITCHMODE Schottky Power Rectifier The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 |
MBRF20100产品属性
- 类型
描述
- 型号
MBRF20100
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
SWITCHMODE⑩ Schottky Power Rectifirers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Slkor/萨科微 |
24+ |
TO-220F |
50000 |
Slkor/萨科微一级代理,价格优势 |
|||
ONSEMI/安森美 |
25+ |
TO-220F |
90000 |
ONSEMI/安森美全新特价MBRF20100CTG即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
23+ |
25850 |
新到现货,只有原装 |
||||
LIHUI |
19+ |
TO-220F |
29550 |
||||
ON |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
|||
NAMC耐美 |
2014 |
TO-220 |
257 |
全新原装 正品现货 |
|||
ON |
23+ |
TO-220F |
65400 |
||||
ON |
2021+ |
TO-220F |
9450 |
原装现货。 |
|||
ON |
2430+ |
to-220F |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
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MBRF20100规格书下载地址
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