Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

文件：152.24 Kbytes Page：5 Pages

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 100V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

Dual Common-Cathode High-Voltage Schottky Rectifier

文件：154.98 Kbytes Page：5 Pages

Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

Trench MOS Schottky technology

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

文件：152.24 Kbytes Page：5 Pages