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MBRF20100CT价格
参考价格:¥20.7961
型号:MBRF20100CT 品牌:ON 备注:这里有MBRF20100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRF20100CT批发/采购报价,MBRF20100CT行情走势销售排行榜,MBRF20100CT报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MBRF20100CT | SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns. | KEC KEC(Korea Electronics) | ||
MBRF20100CT | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● Metal of silicon rectifier | HY 虹扬科技 | ||
MBRF20100CT | 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Full Pack High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子(集团)有限公司 | ||
MBRF20100CT | Dual Common-Cathode High-Voltage Schottky Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世科技 | ||
MBRF20100CT | Dual High-Voltage Schottky Barrier Rectifiers FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in | SSC Silicon Standard Corp. | ||
MBRF20100CT | SCHOTTKY BARRIER RECTIFIER everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e | DIOTECH | ||
MBRF20100CT | SWITCHMODE Schottky Power Rectifier The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | ||
MBRF20100CT | SWITCHMODE??Schottky Power Rectifirers
| Motorola 摩托罗拉 | ||
MBRF20100CT | Dual High-Voltage Schottky Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世科技 | ||
MBRF20100CT | Isolated 20.0 AMPS. Schottky Barrier Rectifiers Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code | TSC 台湾半导体 | ||
MBRF20100CT | DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ Metal silicon junction, majority carrier conduction. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ High current capa | BILIN 银河微电 | ||
MBRF20100CT | SCHOTTKY BARRIER RECTIFIER everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e | DIOTECH | ||
MBRF20100CT | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body | DACHANG 大昌电子 | ||
MBRF20100CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | MCC | ||
MBRF20100CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward v | CHENDA 辰达半导体 | ||
MBRF20100CT | 20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | ||
MBRF20100CT | 20A SCHOTTKY BARRIER DIODE
| FORMOSA 美丽微半导体 | ||
MBRF20100CT | SCHOTTKY RECTIFIER Features: • 175 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMC 桑德斯微电子 | ||
MBRF20100CT | Schottky Barrier Rectifier FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequ | ISC 无锡固电 | ||
MBRF20100CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | ||
MBRF20100CT | Schottky Barrier Rectifier Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | Surge | ||
MBRF20100CT | DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard rin | DSK | ||
MBRF20100CT | Product Specification Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | Good-Ark 固锝电子 | ||
MBRF20100CT | TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | ||
MBRF20100CT | 20A SCHOTTKY BARRIER RECTIFIER Features □ Low forward voltage drop □ High frequency properties and switching speed □ Guard ring for over-voltage protection | WISDOM Wisdom technologies Int`l | ||
MBRF20100CT | 20A High Power Schottky Barrier Rectifiersnull ■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, | CITC 竹懋科技 | ||
MBRF20100CT | Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | ||
MBRF20100CT | Schottky Barrier Diode in a TO-220F Plastic Package Descriptions Schottky Barrier Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. | FOSHAN 蓝箭电子 | ||
MBRF20100CT | Schottky Diodes ■ Features ● Low forward voltage drop ● High frequency properties and switching speed ● Guard ring for over-voltage protection | KEXIN 科信电子 | ||
MBRF20100CT | 20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers Features ✧ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ✧ Metal silicon junction, majority carrier conduction ✧ Low power loss, high efficiency ✧ High current capability, low forward voltage drop ✧ High surge capability ✧ For use in low voltage, high freque | THINKISEMI 思祁半导体 | ||
MBRF20100CT | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s | VishayVishay Siliconix 威世科技 | ||
MBRF20100CT | Dual SchottkyBarrierRectifiers ReverseVoltage 100V Volts ForwardCurrent 20.0Amperes egatloVesreveR 100V Volts serepmA0.02tnerruCdrawroF Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardr | FS | ||
MBRF20100CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBRF20100CT | MBRF20100CT SCHOTTKY RECTIFIER Features Applications 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This | SMCDIODE 桑德斯微电子 | ||
MBRF20100CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBRF20100CT | Schottky Barrier Rectifier Features: • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss,high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 • For use in low voltage, high freque | MULTICOMP 易络盟 | ||
MBRF20100CT | 包装:卷带(TR) 描述:DIODE SCHOTTKY ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBRF20100CT | 封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 100V TO220F 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | ||
MBRF20100CT | 肖特基二极管 | ETC 知名厂家 | ETC | |
MBRF20100CT | 肖特基二极管 | ETC 知名厂家 | ETC | |
MBRF20100CT | 肖特基功率整流器,开关模式,20 A,100 V | ONSEMI 安森美半导体 | ||
MBRF20100CT | Schottky Barrier Recitifiers 文件:497.88 Kbytes Page:4 Pages | HY 虹扬科技 | ||
MBRF20100CT | Schottky Barrier Rectifier 文件:124.26 Kbytes Page:2 Pages | DACHANG 大昌电子 | ||
MBRF20100CT | Plastic material used carries Underwriters Laboratory Classifications 94V-0 文件:921.52 Kbytes Page:2 Pages | KERSEMI | ||
MBRF20100CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:632.26 Kbytes Page:2 Pages | KERSEMI | ||
MBRF20100CT | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:183.36 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF20100CT | SCHOTTKY BARRIER TYPE DIODE 文件:43.58 Kbytes Page:2 Pages | KEC KEC(Korea Electronics) | ||
MBRF20100CT | Dual Common-Cathode High-Voltage Schottky Rectifier 文件:154.98 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技 | ||
MBRF20100CT | Dual Common-Cathode High-Voltage Schottky Rectifier 文件:78.98 Kbytes Page:4 Pages | VishayVishay Siliconix 威世科技 | ||
MBRF20100CT | Dual Common Cathode Schottky Rectifier 文件:231.87 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF20100CT | Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件:122.87 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
Dual Common-Cathode High-Voltage Schottky Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世科技 | |||
Dual Common-Cathode High-Voltage Schottky Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, | VishayVishay Siliconix 威世科技 | |||
SWITCHMODE Schottky Power Rectifier The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 |
MBRF20100CT产品属性
- 类型
描述
- 型号
MBRF20100CT
- 功能描述
肖特基二极管与整流器 20 Amp 100 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
NAMC耐美 |
2014 |
TO-220 |
257 |
全新原装 正品现货 |
|||
SSG |
23+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
|||
台湾光宝 |
24+ |
TO-220F |
6980 |
原装现货,可开13%税票 |
|||
VISHAY/威世 |
24+ |
TO-220F |
9600 |
原装现货,优势供应,支持实单! |
|||
ONSEMI/安森美 |
25+ |
TO-220F |
90000 |
ONSEMI/安森美全新特价MBRF20100CTG即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
24+ |
TO-220F |
375 |
只做原厂渠道 可追溯货源 |
|||
台半 |
2447 |
TO220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MOSPEC |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ON |
2021+ |
TO-220F |
9450 |
原装现货。 |
MBRF20100CT芯片相关品牌
MBRF20100CT规格书下载地址
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DdatasheetPDF页码索引
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