The Switch−mode Power Rectifier employs the Schottky Barrier

principle in a large area metal−to−silicon power diode.

State−of−the−art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for use as

rectifiers in very low−voltage, high−frequency switching power

supplies, free wheeling diodes and polarity protection diodes.

Features

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Electrically Isolated. No Isolation Hardware Required.

• These are Pb−Free Devices

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds