型号 功能描述 生产厂家 企业 LOGO 操作
MBRA180

1A 80V Schottky diode

文件:297.509 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

MBRA180

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件:216.05 Kbytes Page:2 Pages

SEMTECH_ELEC

先之科半导体

MBRA180

SURFACE MOUNT SCHOTTK Y BARRIER RECTIFIER

文件:1.24803 Mbytes Page:2 Pages

TAYCHIPST

泰迪斯电子

MBRA180

肖特基整流管

STMICROELECTRONICS

意法半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

FORMOSA

美丽微半导体

CHIP SCHOTTKY BARRIER DIODES

FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

TAYCHIPST

泰迪斯电子

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

NTE

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

MBRA180产品属性

  • 类型

    描述

  • 型号

    MBRA180

  • 制造商

    SEMTECH_ELEC

  • 制造商全称

    SEMTECH ELECTRONICS LTD.

  • 功能描述

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

更新时间:2026-3-14 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
DO-214AC
20000
只做原装
ON/安森美
25+
SMA
30000
原装正品公司现货,假一赔十!
VISHAY/威世
21+
DO-214AC
30000
百域芯优势 实单必成 可开13点增值税
VISHAYMAS
25+23+
DO-214AC
25564
绝对原装正品现货,全新深圳原装进口现货
ON/安森美
21+
SMA
8080
只做原装,质量保证
ON
25+
SMA
30000
代理全新原装现货,价格优势
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
2021+
SMA
7600
原装现货,欢迎询价
24+
DO214AC(SMA)
66530
全新原装现货/假一罚百!
ON
20+
DO-214AC
15075
全新 发货1-2天

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