| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6060 | Schottky Power Diode, 60A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity | NAINA | ||
MBR6060 | SCHOTTKY DIODES STUD TYPE 60A 文件:81.79 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MBR6060 | 封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY 60V 60A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | ||
MBR6060 | Silicon Power Schottky Diode 文件:807.46 Kbytes Page:3 Pages | GENESIC | ||
MBR6060 | SCHOTTKY DIODES STUD TYPE 60 A 文件:122.18 Kbytes Page:2 Pages | TEL | ||
MBR6060 | Schottky Diodes | DACO 罡境电子 | ||
MBR6060 | 肖特基二极管 | FORMOSA 美丽微半导体 | ||
MBR6060 | 肖特基二极管 | YSW | ||
丝印代码:MBR6060GPT;Schottky Barrier Rectifiers Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product. | SY 顺烨电子 | |||
丝印代码:MBR6060PT;Schottky Barrier Rectifiers Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product. | SY 顺烨电子 | |||
Schottky Barrier Rectifier FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. | ISC 无锡固电 | |||
MBR6060CT SCHOTTKY RECTIFIER Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − F | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY BARRIER RECTIFIERS Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-O Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed250C/10 seconds at terminals | YFWDIODE 佑风微 | |||
Schottky Barrier Rectifiers ■ Productor Character ● Multilayer Metal -Silicon Potential Structure. ● Low Leakage Current. ● High Current Capability, High Efficiency. ● High Junction Temperature Capability. ● RoHs Product. | SHUNYE 顺烨电子 | |||
SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | |||
60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | |||
Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | |||
60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes Features Low forward voltage drop ThinkiSemi matured planar process schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS Plating Power Supply/SMPS Car Audio Amplifier and Sound Device System | THINKISEMI 思祁半导体 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Power Diode, 60A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity | NAINA | |||
MBR6060WT SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY RECTIFIER 文件:134.04 Kbytes Page:5 Pages | SMC 桑德斯微电子 | |||
60.0A SCHOTTKY BARRIER DIODE 文件:166.76 Kbytes Page:2 Pages | ZSELEC 淄博圣诺 | |||
SCHOTTKY BARRIER RECTIFIER 文件:759.94 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Schottky Barrier Rectifier 文件:224.29 Kbytes Page:2 Pages | ISC 无锡固电 | |||
60 AMPS. Schottky Barrier Rectifiers 文件:479.39 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
60 AMPS. Schottky Barrier Rectifiers 文件:369.39 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
封装/外壳:TO-247-3 包装:剪切带(CT)Digi-Reel® 得捷定制卷带管件 描述:DIODE SCHOTTKY 60V 60A TO247AD 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | |||
Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A 文件:393.83 Kbytes Page:2 Pages | FS | |||
Dual Common-Cathode Schottky Rectifier 文件:297.47 Kbytes Page:6 Pages | NELLSEMI 尼尔半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
SCHOTTKY BARRIER RECTIFIER 文件:759.94 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
Silicon Power Schottky Diode 文件:807.46 Kbytes Page:3 Pages | GENESIC | |||
SCHOTTKY DIODES STUD TYPE 60A 文件:81.79 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SCHOTTKY DIODES STUD TYPE 60 A 文件:122.18 Kbytes Page:2 Pages | TEL | |||
SCHOTTKY RECTIFIER 文件:366.81 Kbytes Page:7 Pages | SMC 桑德斯微电子 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | |||
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS 文件:547.62 Kbytes Page:7 Pages | QT | |||
Fast radio tuning PLL frequency synthesizer 文件:236.38 Kbytes Page:16 Pages | PHILIPS 飞利浦 | |||
Fast radio tuning PLL frequency synthesizer 文件:236.38 Kbytes Page:16 Pages | PHILIPS 飞利浦 |
MBR6060产品属性
- 类型
描述
- Io@Tj(A):
60
- IFSM(A):
700
- IR@Tj(mA):
20
- Designation:
DO-5
- Type:
Discrete
- Compliance:
' ''>
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NJSEMI |
25+ |
NA |
1410 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
22+ |
TO-220 |
96322 |
||||
MOTOROLA/摩托罗拉 |
25+ |
MODULE |
5169 |
主打螺丝模块系列 |
|||
MICROCHIP(美国微芯) |
26+ |
- |
16000 |
原装认证库存更多原厂可发 |
|||
JXND/嘉兴南电 |
22+ |
TO-3P |
20000 |
公司只做原装 品质保障 |
|||
SMC Diode Solutions |
22+ |
TO247AD |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-3P |
1200 |
||||
SSG |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
SMD |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MBR6060规格书下载地址
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