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型号 功能描述 生产厂家 企业 LOGO 操作
MBR6060

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

MBR6060

SCHOTTKY DIODES STUD TYPE 60A

文件:81.79 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR6060

封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY 60V 60A DO5 分立半导体产品 二极管 - 整流器 - 单

GENESIC

MBR6060

Silicon Power Schottky Diode

文件:807.46 Kbytes Page:3 Pages

GENESIC

MBR6060

SCHOTTKY DIODES STUD TYPE 60 A

文件:122.18 Kbytes Page:2 Pages

TEL

MBR6060

Schottky Diodes

DACO

罡境电子

MBR6060

肖特基二极管

FORMOSA

美丽微半导体

MBR6060

肖特基二极管

YSW

丝印代码:MBR6060GPT;Schottky Barrier Rectifiers

Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product.

SY

顺烨电子

丝印代码:MBR6060PT;Schottky Barrier Rectifiers

Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product.

SY

顺烨电子

Schottky Barrier Rectifier

FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability.

ISC

无锡固电

MBR6060CT SCHOTTKY RECTIFIER

Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − F

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIERS

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-O Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed250C/10 seconds at terminals

YFWDIODE

佑风微

Schottky Barrier Rectifiers

■ Productor Character ● Multilayer Metal -Silicon Potential Structure. ● Low Leakage Current. ● High Current Capability, High Efficiency. ● High Junction Temperature Capability. ● RoHs Product.

SHUNYE

顺烨电子

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

60.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

60.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

DSK

60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

THINKISEMI

思祁半导体

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

MBR6060WT SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

文件:134.04 Kbytes Page:5 Pages

SMC

桑德斯微电子

60.0A SCHOTTKY BARRIER DIODE

文件:166.76 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

SCHOTTKY BARRIER RECTIFIER

文件:759.94 Kbytes Page:3 Pages

YFWDIODE

佑风微

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

Schottky Barrier Rectifier

文件:224.29 Kbytes Page:2 Pages

ISC

无锡固电

60 AMPS. Schottky Barrier Rectifiers

文件:479.39 Kbytes Page:2 Pages

TSC

台湾半导体

60 AMPS. Schottky Barrier Rectifiers

文件:369.39 Kbytes Page:2 Pages

TSC

台湾半导体

封装/外壳:TO-247-3 包装:剪切带(CT)Digi-Reel® 得捷定制卷带管件 描述:DIODE SCHOTTKY 60V 60A TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A

文件:393.83 Kbytes Page:2 Pages

FS

Dual Common-Cathode Schottky Rectifier

文件:297.47 Kbytes Page:6 Pages

NELLSEMI

尼尔半导体

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

SCHOTTKY BARRIER RECTIFIER

文件:759.94 Kbytes Page:3 Pages

YFWDIODE

佑风微

Silicon Power Schottky Diode

文件:807.46 Kbytes Page:3 Pages

GENESIC

SCHOTTKY DIODES STUD TYPE 60A

文件:81.79 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCHOTTKY DIODES STUD TYPE 60 A

文件:122.18 Kbytes Page:2 Pages

TEL

SCHOTTKY RECTIFIER

文件:366.81 Kbytes Page:7 Pages

SMC

桑德斯微电子

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

FAIRCHILD

仙童半导体

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

文件:547.62 Kbytes Page:7 Pages

QT

Fast radio tuning PLL frequency synthesizer

文件:236.38 Kbytes Page:16 Pages

PHILIPS

飞利浦

Fast radio tuning PLL frequency synthesizer

文件:236.38 Kbytes Page:16 Pages

PHILIPS

飞利浦

MBR6060产品属性

  • 类型

    描述

  • Io@Tj(A):

    60

  • IFSM(A):

    700

  • IR@Tj(mA):

    20

  • Designation:

    DO-5

  • Type:

    Discrete

  • Compliance:

    ' ''>

更新时间:2026-8-1 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NJSEMI
25+
NA
1410
专做原装正品,假一罚百!
ON/安森美
22+
TO-220
96322
MOTOROLA/摩托罗拉
25+
MODULE
5169
主打螺丝模块系列
MICROCHIP(美国微芯)
26+
-
16000
原装认证库存更多原厂可发
JXND/嘉兴南电
22+
TO-3P
20000
公司只做原装 品质保障
SMC Diode Solutions
22+
TO247AD
9000
原厂渠道,现货配单
IR
24+
TO-3P
1200
SSG
18+
TO-3P
85600
保证进口原装可开17%增值税发票
MOTOROLA
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
SMD
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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