| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6060PT | 丝印代码:MBR6060PT;Schottky Barrier Rectifiers Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product. | SY 顺烨电子 | ||
MBR6060PT | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBR6060PT | Schottky Barrier Rectifiers ■ Productor Character ● Multilayer Metal -Silicon Potential Structure. ● Low Leakage Current. ● High Current Capability, High Efficiency. ● High Junction Temperature Capability. ● RoHs Product. | SHUNYE 顺烨电子 | ||
MBR6060PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | ||
MBR6060PT | 60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes Features Low forward voltage drop ThinkiSemi matured planar process schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS Plating Power Supply/SMPS Car Audio Amplifier and Sound Device System | THINKISEMI 思祁半导体 | ||
MBR6060PT | 60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR6060PT | 60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR6060PT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBR6060PT | 60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6060PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6060PT | Schottky Barrier Rectifier 文件:224.29 Kbytes Page:2 Pages | ISC 无锡固电 | ||
MBR6060PT | 封装/外壳:TO-247-3 包装:剪切带(CT)Digi-Reel® 得捷定制卷带管件 描述:DIODE SCHOTTKY 60V 60A TO247AD 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | ||
MBR6060PT | Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR6060PT | 60 AMPS. Schottky Barrier Rectifiers 文件:479.39 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR6060PT | 60 AMPS. Schottky Barrier Rectifiers 文件:369.39 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR6060PT | 60.0A SCHOTTKY BARRIER DIODE 文件:166.76 Kbytes Page:2 Pages | ZSELEC 淄博圣诺 | ||
MBR6060PT | SCHOTTKY BARRIER RECTIFIER 文件:759.94 Kbytes Page:3 Pages | YFWDIODE 佑风微 | ||
MBR6060PT | Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A 文件:393.83 Kbytes Page:2 Pages | FS | ||
MBR6060PT | Dual Common-Cathode Schottky Rectifier 文件:297.47 Kbytes Page:6 Pages | NELLSEMI 尼尔半导体 | ||
MBR6060PT | 肖特基 | WPI | ||
MBR6060PT | 肖特基二极管 | DOWOSEMI 东沃电子 | ||
MBR6060PT | 肖特基二极管 | ASEMI 强元芯电子 | ||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
包装:管件 描述:DIODE SCHOTTKY 60A 60V TO-247AD 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | |||
Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
SCHOTTKY BARRIER RECTIFIER 文件:759.94 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | |||
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS 文件:547.62 Kbytes Page:7 Pages | QT | |||
Fast radio tuning PLL frequency synthesizer 文件:236.38 Kbytes Page:16 Pages | PHILIPS 飞利浦 | |||
Fast radio tuning PLL frequency synthesizer 文件:236.38 Kbytes Page:16 Pages | PHILIPS 飞利浦 |
MBR6060PT产品属性
- 类型
描述
- VRRM Max.[V]:
60
- IF[A]:
60
- IFSM[A]:
400
- VF@IF Max.[V]:
0.79
- VF@IF Max.[A]:
30
- IR@VR Max.[µA]:
100
- IR@VR Max.[V]:
60
- Package:
TO-3P\\/TO-247AD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC America Inc. |
22+ |
9000 |
原厂渠道,现货配单 |
||||
TaiwanSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON |
22+ |
原厂封装 |
12415 |
原装正品,实单请联系 |
|||
ON |
25+ |
TO-247 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
MICROCHIP(美国微芯) |
26+ |
- |
16000 |
原装认证库存更多原厂可发 |
|||
IR |
24+ |
TO-3P |
1200 |
||||
LX/凌讯微 |
24+ |
TO-247 |
567000 |
原装现货 |
|||
TSC/台湾半导体 |
25+ |
TO-3P |
90000 |
全新原装现货 |
|||
LITEON |
TO-247 |
6688 |
15 |
现货库存 |
|||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
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DdatasheetPDF页码索引
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