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MBR6060PT

丝印代码:MBR6060PT;Schottky Barrier Rectifiers

Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product.

SY

顺烨电子

MBR6060PT

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

MBR6060PT

Schottky Barrier Rectifiers

■ Productor Character ● Multilayer Metal -Silicon Potential Structure. ● Low Leakage Current. ● High Current Capability, High Efficiency. ● High Junction Temperature Capability. ● RoHs Product.

SHUNYE

顺烨电子

MBR6060PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

DSK

MBR6060PT

60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

THINKISEMI

思祁半导体

MBR6060PT

60.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR6060PT

60.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR6060PT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBR6060PT

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

MBR6060PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

MBR6060PT

Schottky Barrier Rectifier

文件:224.29 Kbytes Page:2 Pages

ISC

无锡固电

MBR6060PT

封装/外壳:TO-247-3 包装:剪切带(CT)Digi-Reel® 得捷定制卷带管件 描述:DIODE SCHOTTKY 60V 60A TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

MBR6060PT

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

MBR6060PT

60 AMPS. Schottky Barrier Rectifiers

文件:479.39 Kbytes Page:2 Pages

TSC

台湾半导体

MBR6060PT

60 AMPS. Schottky Barrier Rectifiers

文件:369.39 Kbytes Page:2 Pages

TSC

台湾半导体

MBR6060PT

60.0A SCHOTTKY BARRIER DIODE

文件:166.76 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

MBR6060PT

SCHOTTKY BARRIER RECTIFIER

文件:759.94 Kbytes Page:3 Pages

YFWDIODE

佑风微

MBR6060PT

Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A

文件:393.83 Kbytes Page:2 Pages

FS

MBR6060PT

Dual Common-Cathode Schottky Rectifier

文件:297.47 Kbytes Page:6 Pages

NELLSEMI

尼尔半导体

MBR6060PT

肖特基

WPI

MBR6060PT

肖特基二极管

DOWOSEMI

东沃电子

MBR6060PT

肖特基二极管

ASEMI

强元芯电子

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

包装:管件 描述:DIODE SCHOTTKY 60A 60V TO-247AD 分立半导体产品 二极管 - 整流器 - 单

MICROCHIP

微芯科技

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

SCHOTTKY BARRIER RECTIFIER

文件:759.94 Kbytes Page:3 Pages

YFWDIODE

佑风微

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

FAIRCHILD

仙童半导体

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

文件:547.62 Kbytes Page:7 Pages

QT

Fast radio tuning PLL frequency synthesizer

文件:236.38 Kbytes Page:16 Pages

PHILIPS

飞利浦

Fast radio tuning PLL frequency synthesizer

文件:236.38 Kbytes Page:16 Pages

PHILIPS

飞利浦

MBR6060PT产品属性

  • 类型

    描述

  • VRRM Max.[V]:

    60

  • IF[A]:

    60

  • IFSM[A]:

    400

  • VF@IF Max.[V]:

    0.79

  • VF@IF Max.[A]:

    30

  • IR@VR Max.[µA]:

    100

  • IR@VR Max.[V]:

    60

  • Package:

    TO-3P\\/TO-247AD

更新时间:2026-8-3 18:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC America Inc.
22+
9000
原厂渠道,现货配单
TaiwanSemiconductor
24+
NA
3000
进口原装正品优势供应
ON
22+
原厂封装
12415
原装正品,实单请联系
ON
25+
TO-247
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MICROCHIP(美国微芯)
26+
-
16000
原装认证库存更多原厂可发
IR
24+
TO-3P
1200
LX/凌讯微
24+
TO-247
567000
原装现货
TSC/台湾半导体
25+
TO-3P
90000
全新原装现货
LITEON
TO-247
6688
15
现货库存
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择

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