Schottky Barrier Rectifier

FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability.

MBR6060CT SCHOTTKY RECTIFIER

Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − F

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 60V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管

肖特基二极管

肖特基二极管

SCHOTTKY RECTIFIER

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N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

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Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages

Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages