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NDB6060价格
参考价格：￥5.6068
型号：NDB6060L 品牌：FAIRCHILD 备注：这里有NDB6060多少钱，2026年最近7天走势，今日出价，今日竞价，NDB6060批发/采购报价，NDB6060行情走势销售排行榜，NDB6060报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NDB6060 | N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 |   | |
NDB6060 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NDB6060 | N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, | ONSEMI 安森美半导体 | | |
NDB6060 | N-Channel Enhancement Mode Field Effect Transistor | ONSEMI 安森美半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching p | FAIRCHILD 仙童半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：986 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：513.57 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | | ||
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS 文件：547.62 Kbytes Page：7 Pages | QT | | ||
Fast radio tuning PLL frequency synthesizer 文件：236.38 Kbytes Page：16 Pages | PHILIPS 飞利浦 | | ||
Fast radio tuning PLL frequency synthesizer 文件：236.38 Kbytes Page：16 Pages | PHILIPS 飞利浦 | |
NDB6060产品属性
- 类型
描述
- 型号
NDB6060
- 功能描述
MOSFET N-CH 60V 48A TO-263AB
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-263-3 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
TO-263-3 |
18746 |
样件支持,可原厂排单订货! |
|||
FAIRCHI |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
FAIRCHILD |
1922+ |
TO-263 |
393 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
20+ |
TO-263 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILDSEM |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
ON/安森美 |
21+ |
TO-263AB |
8080 |
只做原装,质量保证 |
|||
FAIRCHILDSEM |
2025+ |
TO-263-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
25+ |
TO-263AB |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
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DdatasheetPDF页码索引
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