Schottky Barrier Rectifier

Features Power pack metal silicon junction ,majarity carrier conduction

MBR6045CT/MBRB6045CT/MBR6045CT-1 SCHOTTKY RECTIFIER

Applications Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

文件：172.07 Kbytes Page：6 Pages

SCHOTTKY RECTIFIER

文件：172.07 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

文件：40.48 Kbytes Page：1 Pages