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MBR35价格

参考价格：￥0.6989

型号：MBR350RLG 品牌：ONSemi 备注：这里有MBR35多少钱，2025年最近7天走势，今日出价，今日竞价，MBR35批发/采购报价，MBR35行情走势销售排行榜，MBR35报价。

型号	功能描述	生产厂家&企业
MBR35	3.0A 50V Schottky diode 文件：376.203 Kbytes Page：2 Pages	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳冠荣电子有限公司
MBR350	SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade	IRF International Rectifier
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR350	SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MBR350	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世科技威世科技半导体
MBR350	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen	PANJITPan Jit International Inc. 強茂強茂股份有限公司
MBR350	3A SCHOTTKY RECTIFIER 3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.	DIGITRON Digitron Semiconductors
MBR350	3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR350_V01	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR35005W	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3505	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR3505W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR350F	SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti	AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR350RLG	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR350TR	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世科技威世科技半导体
MBR351	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR3510	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR3510	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3510	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR3510	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR35100	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司
MBR35100	Schottky Power Diode, 35A Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA Naina Semiconductor ltd.
MBR35100R	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司
MBR35100R	Schottky Power Diode, 35A Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA Naina Semiconductor ltd.
MBR3510W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR351W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR352	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR3520	Not ESD Sensitive Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive	GENESIC GeneSiC Semiconductor, Inc.
MBR3520	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司
MBR3520	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA Naina Semiconductor ltd.
MBR3520R	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司
MBR3520R	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA Naina Semiconductor ltd.
MBR352W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM Dc Components
MBR3530	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司
MBR3530	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA Naina Semiconductor ltd.
MBR3530R	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司
MBR3530R	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA Naina Semiconductor ltd.
MBR3535	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TELTokyo Electron Ltd. 东电电子东京电子有限公司

MBR35产品属性

类型
描述
型号
MBR35
功能描述
DIODE SCHOTTKY 50V 3A C-16
RoHS
是
类别
分离式半导体产品 >> 单二极管/整流器
系列
-
标准包装
100
系列
-
二极管类型
标准电压
-(Vr)（最大）
50V 电流 -
平均整流(Io)
6A 电压 - 在 If
时为正向(Vf)（最大）
1.4V @ 6A
速度
快速恢复 = 200mA（Io）
反向恢复时间(trr)
300ns 电流 - 在 Vr
时反向漏电
15µA @ 50V 电容@ Vr,
F
-
安装类型
底座，接线柱安装
封装/外壳
DO-203AA，DO-4，接线柱
供应商设备封装
DO-203AA
包装
散装
其它名称
*1N3879

MBR35供应商更多...

更新时间：2025-8-6 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿智腾科技有限公司	MBR350RLG	原厂原包	24+	原装	38560	原装进口现货,工厂客户可以放款。17377264928微信同	询价
深圳市盈慧通电子有限公司	MBR350RLG	ON(安森美)	2511	标准封装	8000	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市宇创芯科技有限公司	MBR350RLG	ON(安森美)	24+	N/A	18000	原装正品现货支持实单	询价
深圳市富达微科技有限公司	MBR350RLG	ON(安森美)	24+	标准封装	8000	原装，正品	询价
标准国际(香港)有限公司	MBR350	MOT	96		70	公司优势库存热卖中!!	询价
深圳市佳鑫美电子科技有限公司	MBR350RLG	ON	24+	DIP	2658	原装正品!现货供应!	询价
深圳市羿芯诚电子有限公司	MBR350RLG	ON/安森美	24+	TSSOP	10000	原装进口只做订货寻找优势渠道合作	询价
深圳市美思瑞电子科技有限公司	MBR350RL	ON/安森美	22+	N/A	15142	现货,原厂原装假一罚十!	询价
贸泽芯城（深圳）电子科技有限公司	MBR3540R	NSL	23+	35A40V	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市纳立科技有限公司	MBR350RLG		三年内		1983	只做原装正品	询价