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MBR35价格

参考价格：￥0.6989

型号：MBR350RLG 品牌：ONSemi 备注：这里有MBR35多少钱，2025年最近7天走势，今日出价，今日竞价，MBR35批发/采购报价，MBR35行情走势销售排行榜，MBR35报价。

型号	功能描述	生产厂家企业	LOGO
MBR35	3.0A 50V Schottky diode 文件：376.203 Kbytes Page：2 Pages	SUNMATE 森美特 PDF上传者：深圳冠荣电子有限公司	SUNMATE
MBR350	SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade	IRF	IRF
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMI 安森美半导体	ONSEMI
MBR350	SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte	Motorola 摩托罗拉	Motorola
MBR350	3A SCHOTTKY RECTIFIER 3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.	DIGITRON	DIGITRON
MBR350	3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	ZSELEC 淄博圣诺	ZSELEC
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR350	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen	PANJIT 強茂	PANJIT
MBR350_V01	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR35005W	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3505	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3505W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR350F	SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti	AITSEMI 创瑞科技	AITSEMI
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMI 安森美半导体	ONSEMI
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350RLG	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350TR	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR351	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3510	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3510	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3510	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3510	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR35100	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL
MBR35100	Schottky Power Diode, 35A Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA	NAINA
MBR35100R	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL
MBR35100R	Schottky Power Diode, 35A Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA	NAINA
MBR3510W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR351W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR352	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3520	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL
MBR3520	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA	NAINA
MBR3520	Not ESD Sensitive Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive	GENESIC	GENESIC
MBR3520R	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL
MBR3520R	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA	NAINA
MBR352W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3530	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL
MBR3530	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA	NAINA
MBR3530R	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL
MBR3530R	Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity	NAINA	NAINA
MBR3535	SCHOTTKY DIODES STUD TYPE 35 A SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM	TEL	TEL

MBR35产品属性

类型
描述
型号
MBR35
功能描述
DIODE SCHOTTKY 50V 3A C-16
RoHS
是
类别
分离式半导体产品 >> 单二极管/整流器
系列
-
标准包装
100
系列
-
二极管类型
标准电压
-(Vr)（最大）
50V 电流 -
平均整流(Io)
6A 电压 - 在 If
时为正向(Vf)（最大）
1.4V @ 6A
速度
快速恢复 = 200mA（Io）
反向恢复时间(trr)
300ns 电流 - 在 Vr
时反向漏电
15µA @ 50V 电容@ Vr,
F
-
安装类型
底座，接线柱安装
封装/外壳
DO-203AA，DO-4，接线柱
供应商设备封装
DO-203AA
包装
散装
其它名称
*1N3879

MBR35供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	MBR350RLG	ON/安森美	24+	NA/	3480	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市高捷芯城科技有限公司	MBR350RLG	ON(安森美)	24+	标准封装	8148	全新原装正品/价格优惠/质量保障	询价
深圳市科达星科技有限公司	MBR3545	MCC	24+		8000	原装现货,特价销售	询价
深圳市卓越微芯电子有限公司	MBR3545	MCC	25+	N/A	15	百分百原装正品真实公司现货库存本公司只做原装可	询价
标准国际(香港)有限公司	MBR350	MOT	25+		70	公司优势库存热卖中!!	询价
中天科工半导体（深圳）有限公司	MBR350RLG	ON/安森美	25+	DO-201	28512	ON/安森美全新特价MBR350RLG即刻询购立享优惠#长期有货	询价
深圳市中飞凌科技有限公司	MBR350RLG	ON(安森美)	26+	NA	60000	只有原装可配单	询价
深圳市美思瑞电子科技有限公司	MBR350RL	ON/安森美	22+	N/A	15142	现货,原厂原装假一罚十!	询价
深圳市力拓辉电子有限公司	MBR350	ON	21+	DO-201AD	850000	全新原装鄙视假货	询价
深圳市科恒伟业电子有限公司	MBR350T4	ONSEMI	2450+	MSOP8	6540	只做原厂原装正品终端客户免费申请样品	询价

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MBR35价格

MBR35产品属性

MBR35供应商更多...

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MBR35规格书下载地址

MBR35参数引脚图相关

MBR35数据表相关新闻

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MBR3045CL-TO220T-TG_UTC代理商

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DdatasheetPDF页码索引