TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER\nVOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 AmperesFEATURES\n* Plastic case with heatsink for Maximum Heat Dissipation\n* Diffused Junction\n* High current capability\n* Surge overload ratings - 400 Amperes\n* Low forward voltage d * Plastic case with heatsink for Maximum Heat Dissipation\n* Diffused Junction\n* High current capability\n* Surge overload ratings - 400 Amperes\n* Low forward voltage drop\n* High Reliability;

35A Schottky Rectifier

This Schottky Rectifier is packaged in DO-4 package, which has a maximum forward current of 35A.\n\n Available as High Reliability device per MIL-PRF-19500, indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Schottky Power Diode, 35A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

Not ESD Sensitive

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

Schottky Power Diode, 35A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

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SCHOTTKY BARRIER RECTIFIERS

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Silicon Power Schottky Diode

文件：799.73 Kbytes Page：3 Pages

35 AMP SCHOTTKY BARRIER RECTIFIER

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封装/外壳：DO-203AA，DO-4，接线柱 包装：卷带（TR） 描述：DIODE SCHOTTKY 20V 35A DO4 分立半导体产品 二极管 - 整流器 - 单

Silicon Power Schottky Diode

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封装/外壳：DO-203AA，DO-4，接线柱 包装：散装 描述：DIODE SCHOTTKY REV 20V DO4 分立半导体产品 二极管 - 整流器 - 单

Silicon Power Schottky Diode

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Schottky Rectifiers

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

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LinCMOSE DUAL DIFFERENTIAL COMPARATOR

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