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MBR350价格

参考价格：￥0.6989

型号：MBR350RLG 品牌：ONSemi 备注：这里有MBR350多少钱，2025年最近7天走势，今日出价，今日竞价，MBR350批发/采购报价，MBR350行情走势销售排行榜，MBR350报价。

型号	功能描述	生产厂家企业	LOGO
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMI 安森美半导体	ONSEMI
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR350	SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte	Motorola 摩托罗拉	Motorola
MBR350	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen	PANJIT 強茂	PANJIT
MBR350	3A SCHOTTKY RECTIFIER 3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.	DIGITRON	DIGITRON
MBR350	3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	ZSELEC 淄博圣诺	ZSELEC
MBR350	SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade	IRF	IRF
MBR350	3.0A 50V Schottky diode 文件：376.203 Kbytes Page：2 Pages	SUNMATE 森美特 PDF上传者：深圳冠荣电子有限公司	SUNMATE
MBR350	Schottky Rectifier, 3 A 文件：120.33 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR350	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR350	Schottky: Thru Hole Packages	SYNSEMI	SYNSEMI
MBR350	Schottky	SUNMATE 森美特	SUNMATE
MBR350	功率肖特基二极管(IF ≧ 1A)	PANJIT 強茂	PANJIT
MBR350_V01	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR35005W	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3505	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3505W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM 道全	DCCOM
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR350F	SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti	AITSEMI 创瑞科技	AITSEMI
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMI 安森美半导体	ONSEMI
MBR350RLG	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350TR	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR350_06	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR350_12	Schottky Rectifier, 3 A 文件：120.33 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR35005	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR35005_V01	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR35005W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR35005W_V01	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3501	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3501W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3502	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3502W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3504	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3504W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3506	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3506W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3508	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR3508W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR350-M3	Schottky Rectifier, 3 A 文件：120.33 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR350RL	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI

MBR350产品属性

类型
描述
型号
MBR350
功能描述
DIODE SCHOTTKY 50V 3A C-16
RoHS
是
类别
分离式半导体产品 >> 单二极管/整流器
系列
-
标准包装
100
系列
-
二极管类型
标准电压
-(Vr)（最大）
50V 电流 -
平均整流(Io)
6A 电压 - 在 If
时为正向(Vf)（最大）
1.4V @ 6A
速度
快速恢复 = 200mA（Io）
反向恢复时间(trr)
300ns 电流 - 在 Vr
时反向漏电
15µA @ 50V 电容@ Vr,
F
-
安装类型
底座，接线柱安装
封装/外壳
DO-203AA，DO-4，接线柱
供应商设备封装
DO-203AA
包装
散装
其它名称
*1N3879

MBR350供应商更多...

更新时间：2025-12-17 15:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市力拓辉电子有限公司	MBR350	ON	21+	DO-201AD	850000	全新原装鄙视假货	询价
深圳市威雅利发展有限公司	MBR350RLG	ON	08+	DO-201AD	14872	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科恒伟业电子有限公司	MBR350T4	ONSEMI	2450+	MSOP8	6540	只做原厂原装正品终端客户免费申请样品	询价
深圳诚思涵科技有限公司	MBR350RLG	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市正纳电子有限公司	MBR350RL	ON/安森美	23+	NA	15142	电子元器件供应原装现货. 优质独立分销。原厂核心渠道	询价
深圳市一线半导体有限公司	MBR350	ON	24+		90000		询价
深圳市羿芯诚电子有限公司	MBR350RLG	ON/安森美	24+	TSSOP	10000	原装进口只做订货寻找优势渠道合作	询价
深圳市佳鑫美电子科技有限公司	MBR350RLG	ON	25+	DIP	2658	原装正品!现货供应!	询价
深圳市美思瑞电子科技有限公司	MBR350RL	ON/安森美	22+	N/A	15142	现货,原厂原装假一罚十!	询价
深圳市中飞凌科技有限公司	MBR350RLG	ON(安森美)	26+	NA	60000	只有原装可配单	询价

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MBR350价格

MBR350产品属性

MBR350供应商更多...

MBR350芯片相关品牌

MBR350规格书下载地址

MBR350参数引脚图相关

MBR350数据表相关新闻

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MBR3045CL-TO220T-TG_UTC代理商

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