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MBR350价格

参考价格：￥0.6989

型号：MBR350RLG 品牌：ONSemi 备注：这里有MBR350多少钱，2025年最近7天走势，今日出价，今日竞价，MBR350批发/采购报价，MBR350行情走势销售排行榜，MBR350报价。

型号	功能描述	生产厂家&企业	LOGO
MBR350	SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade	IRF	IRF
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMI 安森美半导体	ONSEMI
MBR350	SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte	Motorola 摩托罗拉	Motorola
MBR350	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR350	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen	PANJIT 強茂	PANJIT
MBR350	3A SCHOTTKY RECTIFIER 3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.	DIGITRON	DIGITRON
MBR350	3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	ZSELEC 淄博圣诺电子	ZSELEC
MBR350	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350	3.0A 50V Schottky diode 文件：376.203 Kbytes Page：2 Pages	SUNMATE 森美特 PDF上传者：深圳冠荣电子有限公司	SUNMATE
MBR350	Schottky Rectifier, 3 A 文件：120.33 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR350	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR350_V01	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR35005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark	Good-Ark
MBR35005W	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark	Good-Ark
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark	Good-Ark
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark	Good-Ark
MBR3505	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM	DCCOM
MBR3505W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L	DCCOM	DCCOM
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark	Good-Ark
MBR3506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark	Good-Ark
MBR3508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY	HY
MBR350F	SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti	AITSEMI 创瑞科技	AITSEMI
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350RL	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling	ONSEMI 安森美半导体	ONSEMI
MBR350RLG	Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee	ONSEMI 安森美半导体	ONSEMI
MBR350TR	Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR350_06	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR350_12	Schottky Rectifier, 3 A 文件：120.33 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR35005	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR35005_V01	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR35005W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR35005W_V01	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR3501	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR3501W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR3502	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR3502W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR3504	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR3504W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR3506	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR3506W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR3508	Silicon Bridge Rectifiers 文件：403 Kbytes Page：3 Pages	HY	HY
MBR3508W	Silicon Bridge Rectifiers 文件：353.27 Kbytes Page：3 Pages	HY	HY
MBR350-M3	Schottky Rectifier, 3 A 文件：120.33 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
MBR350RL	封装/外壳：DO-201AA，DO-27，轴向包装：卷带（TR）描述：DIODE SCHOTTKY 50V 3A DO201AD 分立半导体产品二极管 - 整流器 - 单	ONSEMI 安森美半导体	ONSEMI
MBR350RL	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR350RLG	Axial Lead Rectifiers 文件：59.75 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR350RLG	封装/外壳：DO-201AA，DO-27，轴向包装：管件描述：DIODE SCHOTTKY 50V 3A DO201AD 分立半导体产品二极管 - 整流器 - 单	ONSEMI 安森美半导体	ONSEMI

MBR350产品属性

类型
描述
型号
MBR350
功能描述
DIODE SCHOTTKY 50V 3A C-16
RoHS
是
类别
分离式半导体产品 >> 单二极管/整流器
系列
-
标准包装
100
系列
-
二极管类型
标准电压
-(Vr)（最大）
50V 电流 -
平均整流(Io)
6A 电压 - 在 If
时为正向(Vf)（最大）
1.4V @ 6A
速度
快速恢复 = 200mA（Io）
反向恢复时间(trr)
300ns 电流 - 在 Vr
时反向漏电
15µA @ 50V 电容@ Vr,
F
-
安装类型
底座，接线柱安装
封装/外壳
DO-203AA，DO-4，接线柱
供应商设备封装
DO-203AA
包装
散装
其它名称
*1N3879

MBR350供应商更多...

更新时间：2025-8-6 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MBR350RLG	ON(安森美)	24+	标准封装	8148	全新原装正品/价格优惠/质量保障	询价
深圳市得捷芯城科技有限公司	MBR350	IR	24+	NA/	3548	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	MBR350RLG	ON/安森美	25+	DO-201	28512	ON/安森美全新特价MBR350RLG即刻询购立享优惠#长期有货	询价
深圳市联世界科技有限公司	MBR350RLG	ON	24+/25+		860	原装正品现货库存价优	询价
深圳市威雅利发展有限公司	MBR350	IR	1912	D0-201	2000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市芯为科技有限公司	MBR350	Rochester	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市科恒伟业电子有限公司	MBR350	IR	2016+	DO-204AL	6528	房间原装进口现货假一赔十	询价
深圳市科翼源电子有限公司	MBR350	IR	23+	DO-204AL	2798	原厂原装正品	询价
贸泽芯城（深圳）电子科技有限公司	MBR3504W	HY	23+	10	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市力拓辉电子有限公司	MBR350	ON	21+	DO-201AD	850000	全新原装鄙视假货	询价

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MBR350价格

MBR350产品属性

MBR350供应商更多...

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MBR350规格书下载地址

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