SCHOTTKY DIODES MODULE TYPE 200A

Features High Surge Capability Types Up to 100V VRRM

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY RECTIFIER

文件：206.7 Kbytes Page：7 Pages

25 Watts, 1.6-1.7 GHz RF Power Transistor

Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization

SCHOTTKY DIODES MODULE TYPE 200A

文件：124.28 Kbytes Page：2 Pages