200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 200A

200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM

Silicon Schottky Diode, 200A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

200 Amp Schottky Barrier Rectifier 20 to 100 Volts

200 Amp Schottky Barrier Rectifier 20 to 100 Volts

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 80V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Power Schottky Diode

文件：712.33 Kbytes Page：3 Pages

Schottky PowerMod

文件：123.26 Kbytes Page：2 Pages

HIGH POWER -SCHOTTKY RECTIFIERS

文件：446.88 Kbytes Page：2 Pages

SCHOTTKY RECTIFIER

文件：206.7 Kbytes Page：7 Pages

Schottky Rectifiers

SCHOTTKY DIODES MODULE TYPE 200A

200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM

SCHOTTKY RECTIFIER

文件：206.7 Kbytes Page：7 Pages

HIGH POWER -SCHOTTKY RECTIFIERS

文件：446.88 Kbytes Page：2 Pages

Silicon Power Schottky Diode

文件：712.33 Kbytes Page：3 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 80V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Rectifiers

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

25 Watts, 1.6-1.7 GHz RF Power Transistor

Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization

SCHOTTKY DIODES MODULE TYPE 200A

文件：124.28 Kbytes Page：2 Pages