25 Watts, 1.6-1.7 GHz RF Power Transistor

Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization

25 Watts, 1.6-1.7GHz RF Power Transistor

Schottky PowerMod

Schottky Barrier Rectifier 200 Amperes/ 80 to 100 Volts Guard Ring Protection 175 C Junction Temperature Reverse Energy Tested ROHS Compliant

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 200A

Features High Surge Capability Types Up to 100V VRRM

180 Amp Schottky Rectifier

180 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 180 Amperes/80 to 100 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

Schottky PowerMod

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