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型号 功能描述 生产厂家 企业 LOGO 操作
MBR20020CT

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

MCC

MBR20020CT

Silicon Schottky Diode, 200A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

NAINA

MBR20020CT

200 Amp Schottky Barrier Rectifier 20 to 100 Volts

200 Amp Schottky Barrier Rectifier 20 to 100 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR20020CT

High Surge Capability

Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive

GENESIC

MBR20020CT

HIGH POWER-SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types Up to 100V VRRM

AMERICASEMI

MBR20020CT

SCHOTTKY DIODES MODULE TYPE 200A

200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM

TEL

MBR20020CT

封装/外壳:双塔架 包装:散装 描述:DIODE MODULE 20V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

GENESIC

MBR20020CT

Schottky Rectifiers

NAVITAS

纳微半导体

MBR20020CT

Silicon Power Schottky Diode

文件:542.18 Kbytes Page:3 Pages

GENESIC

SCHOTTKY DIODES MODULE TYPE 200A

200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM

TEL

HIGH POWER-SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types Up to 100V VRRM

AMERICASEMI

Silicon Power Schottky Diode

文件:542.18 Kbytes Page:3 Pages

GENESIC

Schottky Rectifiers

NAVITAS

纳微半导体

封装/外壳:双塔架 包装:散装 描述:DIODE MODULE 20V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

GENESIC

Silicon Power Schottky Diode

文件:542.18 Kbytes Page:3 Pages

GENESIC

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

MCC

200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

MCC

ULTRAFAST RECTIFIERS 200 AMPERES 200.400 VOLTS

POWERTAP II Ultrafast SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters, and as free wheeling diodes. These state–of–the–art devices have the following features: • Dual Diode Construction • Low Leakage Current • Low Forward Voltage • 175°C Operating Ju

MOTOROLA

摩托罗拉

ULTRA FAST RECOVERY MODULES

文件:231.22 Kbytes Page:4 Pages

MICROSEMI

美高森美

MBR20020CT产品属性

  • 类型

    描述

  • Io@Tj(A):

    200

  • IFSM(A):

    1500

  • IR@Tj(mA):

    20

  • Designation:

    Twin-Tower

  • Type:

    Module

  • Compliance:

    ' ''>

更新时间:2026-5-18 23:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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25+
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98192
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MODULE
8513
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22+
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20000
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2022+PB
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15500
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2023+
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600
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MCC
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15500
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25+
11
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Bychip/百域芯
21+
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30000
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23+
模块
450
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MOTOROLA
24+
2173
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