位置:首页 > IC中文资料第2444页 > MBR1035G

MBR1035G价格

参考价格:¥2.0083

型号:MBR1035G 品牌:ONSemi 备注:这里有MBR1035G多少钱,2026年最近7天走势,今日出价,今日竞价,MBR1035G批发/采购报价,MBR1035G行情走势销售排行榜,MBR1035G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR1035G

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification

ONSEMI

安森美半导体

MBR1035G

SWITCHMODE™ Power Rectifiers

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha

ONSEMI

安森美半导体

MBR1035G

封装/外壳:TO-220-2 包装:散装 描述:DIODE SCHOTTKY 35V 10A TO220-2 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

MBR1035G产品属性

  • 类型

    描述

  • 型号

    MBR1035G

  • 功能描述

    肖特基二极管与整流器 10A 35V

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2026-5-19 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI
25+
TO-220AC
20948
样件支持,可原厂排单订货!
ONSEMI
25+
TO-220AC
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
18+
TO-220
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
2450+
TO-220-2
18500
只做原厂原装正品终端客户免费申请样品
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
25+
TO-2202LEAD
880000
明嘉莱只做原装正品现货
ONSEMI
21+
TO-220AC
3968
百域芯优势 实单必成 可开13点增值税
ON
25+23+
TO220AC
17524
绝对原装正品全新进口深圳现货
ON/安森美
22+
TO-2202LEAD
20000
公司只做原装 品质保障

MBR1035G芯片相关品牌

MBR1035G数据表相关新闻