丝印代码：MBR1035CT；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

SCHOTTKY BARRIER RECTIFIER

REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guar

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

10 Am p Schott ky Barrier Rectifier 30-60 Volts

Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Halogen Free Available Upon Request By Adding Suffix -HF • Low Power Loss High Efficiency • High Surge Capacity, High Current Capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Order

10.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guar

10Amp schottky barrier rectifier 30-60volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

Schottky Barrier Recitifier

PRODUCT SUMMARY TO-220 Plastic-Encapsulate Transistors FEATURES Scottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Very low forward voltage drop High Surge Capability High Current Capability and Low Forward Voltage Dr

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

10.0AMPS. Schottky Barrier Rectifiers

ITO-220AB

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

10A SCHOTTKY RECTIFIER

10A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

Dual Common Cathode Schottky Rectifier

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10A SCHOTTKY BARRIER RECTIFIER

文件：77.99 Kbytes Page：2 Pages

10.0 AMPS. Schottky Barrier Rectifiers

文件：196.9 Kbytes Page：2 Pages

High Tjm Low IRRM Schottky Barrier Diodes

文件：94.58 Kbytes Page：2 Pages

10 Amp Schott ky Barrier Rectifier 30-60 Volts

文件：167.78 Kbytes Page：3 Pages

10.0 AMPS. Schottky Barrier Rectifiers

文件：169.78 Kbytes Page：2 Pages

封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 10A 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Schottky

10.0 AMPS. Schottky Barrier Rectifiers

文件：613.1 Kbytes Page：2 Pages

10.0 AMPS. Schottky Barrier Rectifiers

文件：196.9 Kbytes Page：2 Pages

Dual Common Cathode Schottky Rectifier

文件：201.82 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara