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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR1035CT | 10ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtect | DIODESDiodes Incorporated 达尔科技 |  |   |
MBR1035CT | 10AmpSchottkyBarrierRectifier30-60Volts Features •MetalofSiliconRectifier,MajorityCarrierConduction •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LowPowerLossHighEfficiency •HighSurgeCapacity,HighCurrentCapability •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixDesignates Compliant.SeeOrder | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
MBR1035CT | 10.0AMPS.SchottkyBarrierRectifiers VoltageRange30to200VoltsCurrent10.0Amperes Features ◇PlasticmaterialusedcarriesUnderwritersLaboratory Classifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsur | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | |
MBR1035CT | DUALSCHOTTKYRECTIFIERS VOLTAGERANGE:20-60VCURRENT:10A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guar | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
MBR1035CT | 10Ampschottkybarrierrectifier30-60volts Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | |
MBR1035CT | SchottkyBarrierRecitifier PRODUCTSUMMARY TO-220Plastic-EncapsulateTransistors FEATURES ScottkyBarrierChip GuardRingDieConstructionforTransientProtection LowPowerLoss,HighEfficiency Verylowforwardvoltagedrop HighSurgeCapability HighCurrentCapabilityandLowForwardVoltageDr | SSC Silicon Standard Corp. |  | |
MBR1035CT | WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 |  | |
MBR1035CT | Metalofsiliconrectifier,majontycarrierconducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. |  | |
MBR1035CT | 10.0AMPS.SchottkyBarrierRectifiers
| GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合明辉电子山东星合明辉电子有限公司 |  | |
MBR1035CT | ITO-220AB Features ◇PlasticmaterialusedcarriesUnderwritersLaboratory Classifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfreque | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
MBR1035CT | Metalofsiliconrectifier,majontycarrierconducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR1035CT | SchottkyBarrierRectifiers Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardringforovervoltageprotection. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | |
MBR1035CT | Metalofsiliconrectifier,majontycarrierconducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR1035CT | 10ASCHOTTKYRECTIFIER 10ASCHOTTKYRECTIFIER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors |  | |
MBR1035CT | SCHOTTKYBARRIERRECTIFIER FEATURES •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling, andPolarityProtect | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
MBR1035CT | 10.0AMP.SchottkyBarrierRectifiers Features ◇PlasticmaterialusedcarriesUnderwritersLaboratory Classifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfreque | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | |
MBR1035CT | SCHOTTKYBARRIERRECTIFIER SCHOTTKYBARRIERRECTIFIER FEATURES ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
MBR1035CT | Metalofsiliconrectifier,majontycarrierconducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR1035CT | Metalofsiliconrectifier,majontycarrierconducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR1035CT | DUALSCHOTTKYRECTIFIERS VOLTAGERANGE:20-60VCURRENT:10A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guar | DSK Diode Semiconductor Korea |  | |
MBR1035CT | Metalofsiliconrectifier,majontycarrierconducton Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR1035CT | SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrec | MOSPEC MOSPEC |  | |
MBR1035CT | SCHOTTKYBARRIERRECTIFIER REVERSEVOLTAGE:35to200VOLTS FORWARDCURRENT:10.0AMPERE FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Foru | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比电子南通康比电子有限公司 |  | |
MBR1035CT | SchottkyDiodes Features Highfrequencyoperation Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongtermreliability Solderdip275°Cmax.7s,perJESD22-B106 | RFERFE international RFE国际公司RFE国际股份有限公司 |  | |
MBR1035CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 10A 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation |  | |
MBR1035CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | PAMDiodes Incorporated 龙鼎威 |  | |
MBR1035CT | HighTjmLowIRRMSchottkyBarrierDiodes 文件：94.58 Kbytes Page：2 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | |
MBR1035CT | 10AmpSchottkyBarrierRectifier30-60Volts 文件：167.78 Kbytes Page：3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
MBR1035CT | 10.0AMPS.SchottkyBarrierRectifiers 文件：169.78 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
MBR1035CT | DualCommonCathodeSchottkyRectifier 文件：201.82 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
MBR1035CT | 10ASCHOTTKYBARRIERRECTIFIER 文件：77.99 Kbytes Page：2 Pages | DIODESDiodes Incorporated 达尔科技 | | |
MBR1035CT | 10.0AMPS.SchottkyBarrierRectifiers 文件：196.9 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
10.0AMPS.SchottkyBarrierRectifiers 文件：613.1 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
10.0AMPS.SchottkyBarrierRectifiers 文件：196.9 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
DualCommonCathodeSchottkyRectifier 文件：201.82 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Inst,1Pr#16StrBC,PVCInsE1,BlkPVCJkt,300VPLTCITCCMG ProductDescription ULInstrumentation,1Pair16AWG(7x24)BareCopper,PVCInsulationE1ColorCode,BlackPVCOuterJacket,PLTCITCCMGAWM2464SUNRES | BELDEN Belden Inc. |  | | |
1035DDualStepDriveFull&HalfStepping1.0amps,35VDC Features •Accepts12–35VDCpowersupply(including ripple) •Adjustablemotorcurrent:0to1.0amps/phase. •Fullorhalfstep(jumperselectable),quarter steppingavailableforOEM •Compactsize(1.0x2.4x3.55inches) •MountsonDINrail •Opticallyisolated5–24Vstepanddi | AMPAMP Incorporated 安普 |  | | |
35Watts,50VoltsAvionics1025-1150MHz GENERALDESCRIPTION The1035MPisaCOMMONBASEbipolartransistor.Itisdesignedforpulsedsystemsinthefrequencyband1025-1150MHz.Thedevicehasgoldthin-filmmetallizationforprovenhighestMTTF.Thetransistorincludesinputprematchforbroadbandcapability.Lowthermalresistance | ADPOW Advanced Power Technology |  | | |
Cost-efficientandcomplete-anSMTGPSantennamodule 文件：142.9 Kbytes Page：2 Pages | VINCOTECHVincotech Vincotech |  | | |
10TO1000MHzTO-8CASCADABLEAMPLIFIERS 文件：133.47 Kbytes Page：2 Pages | TELEDYNE TELEDYNE |  | |
MBR1035CT产品属性
- 类型
描述
- 型号
MBR1035CT
- 功能描述
肖特基二极管与整流器 10A 35V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes |
21+ |
TO220AB |
13880 |
公司只售原装,支持实单 |
|||
DIODES/美台 |
23+ |
TO-220AB |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
DIODES/美台 |
N/A |
90000 |
公司集团化配单-有更多数量-免费送样-原包装正品现货- |
||||
ON/安森美 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
DIODES-美台 |
24+25+/26+27+ |
TO-220-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
DIODES |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
ON/DIODES/PANJIT |
TO220AB |
43000 |
|||||
MCC/美微科 |
2021+ |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DIODES/美台 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
Diodes |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
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