位置：首页 > IC中文资料第6590页 > M68AW128
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 |   | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：48-TFBGA 包装：管件 描述：IC SRAM 2MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | |
M68AW128产品属性
- 类型
描述
- 型号
M68AW128
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
2 Mbit(128K x16) 3.0V Asynchronous SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
4009 |
原装现货,当天可交货,原型号开票 |
|||
ST |
1245+ |
BGA |
659 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
TSOP-44 |
16900 |
原装，请咨询 |
|||
ST |
BGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
25+ |
BGA |
18000 |
原厂直接发货进口原装 |
|||
ST |
23+ |
TSOP-44 |
16900 |
正规渠道,只有原装! |
|||
ST |
26+ |
TSOP-44 |
60000 |
只有原装 可配单 |
|||
ST/意法 |
2402+ |
TSOP |
8324 |
原装正品!实单价优! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
M68AW128规格书下载地址
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DdatasheetPDF页码索引
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