位置：首页 > IC中文资料第5510页 > M68AW128ML
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M68AW128ML | 2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 |   | |
M68AW128ML | 2 Mbit (128K x16) 3.0V Asynchronous SRAM | STMICROELECTRONICS 意法半导体 | | |
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：48-TFBGA 包装：管件 描述：IC SRAM 2MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | |
M68AW128ML产品属性
- 类型
描述
- 型号
M68AW128ML
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
2 Mbit(128K x16) 3.0V Asynchronous SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST |
26+ |
12 |
原装现货,可开13%税票 |
||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
STMicroelectronics |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
STM |
25+ |
TSOP |
20000 |
原装 |
|||
ST/意法 |
26+ |
1122 |
原装现货 |
||||
ST |
24+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
STMicroelectronics |
18+ |
ICSRAM2MBIT70NS48TFBGA |
6800 |
公司原装现货 |
|||
MXIC |
26+ |
WSON-8 |
27960 |
原装现货.优势热卖.终端BOM表可配单 |
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M68AW128ML规格书下载地址
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DdatasheetPDF页码索引
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