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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M68AW128M | 2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 |   | |
M68AW128M | 2 Mbit (128K x16) 3.0V Asynchronous SRAM | STMICROELECTRONICS 意法半导体 | | |
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：48-TFBGA 包装：管件 描述：IC SRAM 2MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit (128K x16) 3.0V Asynchronous SRAM 文件：335.61 Kbytes Page：22 Pages | STMICROELECTRONICS 意法半导体 | |
M68AW128M产品属性
- 类型
描述
- 型号
M68AW128M
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
2 Mbit(128K x16) 3.0V Asynchronous SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
1245+ |
BGA |
659 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+ |
TSOP-44 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
STM |
24+ |
BGA |
5000 |
全新原装正品,现货销售 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
STM |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
ST/意法 |
24+ |
1122 |
原装现货 |
||||
ST |
25+23+ |
BGA |
35999 |
绝对原装正品全新进口深圳现货 |
M68AW128M规格书下载地址
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DdatasheetPDF页码索引
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