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位置：首页 > IC中文资料第11787页 > M5M5256FP

型号 功能描述 生产厂家&企业 LOGO 操作
M5M5256FP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM???

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM???

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-45LL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-45LL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-45XL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-45XL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-55LL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-55LL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-55XL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-55XL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-70LL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-70LL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-70XL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256FP-70XL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256BFP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256BKP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256BP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi
M5M5256DFP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M5M5256DFP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

M5M5256FP产品属性

  • 类型

    描述

  • 型号

    M5M5256FP

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    262144-BIT(32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256FP供应商更多...

更新时间：2025-7-29 17:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市星佑电子有限公司
M5M5256FP-12L
MIT
05+
原厂原装
415
只做全新原装真实现货供应
询价
深圳市佳鑫美电子科技有限公司
M5M5256FP-12L
MIT
24+
SOP28W
3629
原装优势!房间现货!欢迎来电!
询价
深圳市科恒伟业电子有限公司
M5M5256FP-15L
MIT
2450+
SMD
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市胜彬电子有限公司
M5M5256FP
MITSUBIS
22+
SOP
3000
原装正品,支持实单
询价
标准国际(香港)有限公司
M5M5256FP-10L
Mit
1
公司优势库存 热卖中!!
询价
贸泽芯城（深圳）电子科技有限公司
M5M5256FP
MITSUBSHI
23+
SOP28
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市富诚威科技有限公司
M5M5256FP-70XL
MITSUBISHI
24+
SOP-28
4650
询价
深圳市一线半导体有限公司
M5M5256FP-70LL
MIT
24+
3000
公司存货
询价
深圳市宏世佳电子科技有限公司
M5M5256FP-10L
MITSUBISHI
2025+
SOP28
3720
全新原厂原装产品、公司现货销售
询价
深圳市芯诚实创科技有限公司
M5M5256FP-70XL
MIT
2022
SOP
7000
全新原装现货
询价

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