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型号	功能描述	生产厂家企业	LOGO
M5M5256BKP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-10	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-10L	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-10LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-12	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-12L	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-12LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-15	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-15L	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-15LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-70	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-70L	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-70LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-85	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-85L	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP-85LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS

M5M5256BKP产品属性

类型
描述
型号
M5M5256BKP
制造商
Mitsubishi Electric
功能描述
Static RAM, 32Kx8, 28 Pin, Plastic, DIP

M5M5256BKP供应商更多...

更新时间：2026-1-3 11:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	M5M5256BKP-70L	MITSUBISHI/三菱	23+	DIP	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
艾睿（深圳）半导体有限公司	M5M5256BP-10L	MITSUMI	2447	DIP	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	M5M5256BP-10L	M5L	23+	DIP	50000	全新原装正品现货,支持订货	询价
深圳市毅创腾电子科技有限公司	M5M5256BKP-10LL	MIT	23+	DIP	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市星佑电子有限公司	M5M5256BKP-10L	MIT	05+	原厂原装	4243	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	M5M5256BKP-85L		24+		3000	公司存货	询价
深圳市坤融电子科技有限公司	M5M5256BKP-10	RENESAS/MITSUBISH	2025+	DIP-28	5000	原装进口价格优请找坤融电子!	询价
深圳市鹏和科技有限公司	M5M5256BKP-10L	MIT	24+	DIP	5000	只做原装公司现货	询价
深圳市壹芯创科技有限公司	M5M5256BP-12L	MIT	22+	DIP-28(大体)	3000	原装现货库存.价格优势	询价
深圳市宇创芯科技有限公司	M5M5256BP-12L	MIT	24+	DIP-28	9600	原装现货,优势供应,支持实单!	询价

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M5M5256BKP规格书下载地址

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M5836
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M5838
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M62342HP
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M61880FP
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M5677-ALAA 进口原装，主营军工级IC
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M61RB，M61SAL108B，M62216FP，M62339FP
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DdatasheetPDF页码索引

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M5M5256BKP产品属性

M5M5256BKP供应商更多...

M5M5256BKP芯片相关品牌

M5M5256BKP规格书下载地址

M5M5256BKP参数引脚图相关

M5M5256BKP数据表相关新闻

M5836

M5838

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引