型号 功能描述 生产厂家&企业 LOGO 操作
M5M5256BKP

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION ThisMBMB5256BP,FP,KPisa262144-bitCMOSstatic RAMorganizedas32768-wordsby8-bitswhichisfabricated usinghigh-performancedoublepolysiliconCMOStechnology. TheuseofresistiveloadNMOScellsandCMOSperiphery resultinahigh-densityandlow-powerstaticRAM.It

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

M5M5256BKP产品属性

  • 类型

    描述

  • 型号

    M5M5256BKP

  • 制造商

    Mitsubishi Electric

  • 功能描述

    Static RAM, 32Kx8, 28 Pin, Plastic, DIP

更新时间:2025-7-30 10:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIT
20+
DIP28
35830
原装优势主营型号-可开原型号增税票
MITSUBISHI
1824+
DIP-28
2735
原装现货专业代理,可以代拷程序
23+
DIP
3880
正品原装货价格低
MIT
23+
DIP
7000
绝对全新原装!100%保质量特价!请放心订购!
MIT
17+
DIP28
9988
只做原装进口,自己库存
MIT
DIP28
94+
8
全新原装进口自己库存优势
MITSUBISHI/三菱
23+
DIP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MIT
05+
原厂原装
4243
只做全新原装真实现货供应
MIT
24+/25+
9
原装正品现货库存价优
MITSUBISHI
25+
QFP
3200
全新原装、诚信经营、公司现货销售!

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