型号 功能描述 生产厂家 企业 LOGO 操作
M5M5256BKP

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

RENESAS

瑞萨

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

RENESAS

瑞萨

M5M5256BKP产品属性

  • 类型

    描述

  • 型号

    M5M5256BKP

  • 制造商

    Mitsubishi Electric

  • 功能描述

    Static RAM, 32Kx8, 28 Pin, Plastic, DIP

更新时间:2026-1-3 15:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIT
25+23+
DIP-28()
9951
绝对原装正品全新进口深圳现货
IDM
25+
DIP
54
全新原装正品支持含税
MITSUBISHI
DIP28
53650
一级代理 原装正品假一罚十价格优势长期供货
MIT
24+
DIP-28
9600
原装现货,优势供应,支持实单!
MITSUBIS
22+
DIP28
3000
原装正品,支持实单
MIT
22+
DIP-28(大体)
3000
原装现货库存.价格优势
RENESAS/MITSUBISH
2025+
DIP-28
5000
原装进口价格优 请找坤融电子!
MITSUMI
2447
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MIT
24+/25+
9
原装正品现货库存价优
MIT
20+
DIP28
35830
原装优势主营型号-可开原型号增税票

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