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型号	功能描述	生产厂家企业	LOGO
M5M5256DFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM	RENESAS 瑞萨	RENESAS
M5M5256DFP-10VLL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-10VLL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-10VXL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-10VXL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-12VLL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-12VLL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-12VXL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-12VXL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-15VLL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-15VLL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-15VXL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-15VXL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-45LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-45XL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-55LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-55XL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-55XL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-70G	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-70GI	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-70LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-70LLI	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-70VLL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70VLL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70VLL-W	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70VXL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70VXL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70XG	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-70XL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70XL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur	RENESAS 瑞萨	RENESAS
M5M5256DFP-85VLL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-85VLL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-85VXL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-85VXL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-85VXL-W	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-10VLL-I	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-45LL	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM	Mitsubishi 三菱电机	Mitsubishi
M5M5256DFP-70LLIBM	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 文件：184.21 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
M5M5256BFP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BKP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi
M5M5256BP	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It	Mitsubishi 三菱电机	Mitsubishi

M5M5256DFP产品属性

类型
描述
型号
M5M5256DFP
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
262144-BIT(32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256DFP供应商更多...

更新时间：2025-10-28 9:14:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市澳亿芯电子科技有限公司	M5M5256DFP-70LLI	RENESAS/瑞萨	23+	sop28	98900	原厂原装正品现货!!	询价
深圳市得捷芯城科技有限公司	M5M5256DFP-70LL	Mitsubishi(三菱)	24+	N/A	10048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市联世界科技有限公司	M5M5256DFP-10LL	MIT	24+/25+		325	原装正品现货库存价优	询价
深圳市恒达亿科技有限公司	M5M5256DFP	OKI	25+	SMD	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市安富世纪电子有限公司	M5M5256DFP	MIT	23+	SOP28	500	全新原装正品现货,支持订货	询价
柒号芯城电子商务(深圳)有限公司	M5M5256DFP-70LL#SM	RENESAS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市高捷芯城科技有限公司	M5M5256DFP-70LL#SM	Renesas(瑞萨)	24+	标准封装	10548	支持大陆交货,美金交易。原装现货库存。	询价
深圳市羿芯诚电子有限公司	M5M5256DFP-70XL	MIT	20+	SOP	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市粤骏腾电子科技有限公司	M5M5256DFP-70LL	MITSUBISHI/三菱	24+	SOP-28	90000	原装现货实单必成	询价
深圳市特瑞斯科技有限公司	M5M5256DFP-70LL	RENESAS	23+	SOP-28	9320	一级分销商	询价

M5M5256DFP芯片相关品牌

M5M5256DFP规格书下载地址

M5M5256DFP参数引脚图相关

M5M5256DFP数据表相关新闻

M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M62342HP
https://hch01.114ic.com/
2020-11-13
M61880FP
https://hch01.114ic.com/
2020-11-13
M5677-ALAA 进口原装，主营军工级IC
M5677-ALAA ALI，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-13
M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SA L108B，M62216FP，M62339FP
2020-1-7

DdatasheetPDF页码索引

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M5M5256DFP产品属性

M5M5256DFP供应商更多...

M5M5256DFP芯片相关品牌

M5M5256DFP规格书下载地址

M5M5256DFP参数引脚图相关

M5M5256DFP数据表相关新闻

M5836

M5838

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引