型号 功能描述 生产厂家 企业 LOGO 操作

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

RENESAS

瑞萨

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

RENESAS

瑞萨

M5M5256B产品属性

  • 类型

    描述

  • 型号

    M5M5256B

  • 制造商

    MITSU

更新时间:2025-12-28 16:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIT
22+
DIP-28(大体)
3000
原装现货库存.价格优势
24+
3000
公司存货
MITSUBISHI
24+
DIP28
35200
一级代理/放心采购
IDM
25+
DIP
54
全新原装正品支持含税
MIT
24+
DIP-28
9600
原装现货,优势供应,支持实单!
MITSUBIS
22+
DIP28
3000
原装正品,支持实单
MITSUMI
2447
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MIT
20+
DIP28
35830
原装优势主营型号-可开原型号增税票
MIT
1995+
DIP-28
117
原装现货海量库存欢迎咨询
RENESAS/MITSUBISH
2025+
DIP-28
5000
原装进口价格优 请找坤融电子!

M5M5256B数据表相关新闻

  • M5838

    M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-4-12
  • M5836

    M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-4-12
  • M62342HP

    https://hch01.114ic.com/

    2020-11-13
  • M61880FP

    https://hch01.114ic.com/

    2020-11-13
  • M5677-ALAA 进口原装,主营军工级IC

    M5677-ALAA ALI,ALTERA(阿尔特拉), ADI亚德诺,军工级IC专业优势渠道

    2020-7-13
  • M61RB,M61SAL108B,M62216FP,M62339FP

    M61RB,M61SA L108B,M62216FP,M62339FP

    2020-1-7