位置：首页 > IC中文资料第9931页 > M58WR064HT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M58WR064HT | 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX numonyx |   | |
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX numonyx | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX numonyx | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX numonyx | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX numonyx | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | |
M58WR064HT产品属性
- 类型
描述
- 型号
M58WR064HT
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
64 Mbit(4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON 存储芯片 FLAH MCU |
ROHS+ Original 元件 |
原厂原封MICRON |
25852 |
现货原装△-电子元件更多数量咨询样品批量支持;详询 |
|||
Micron |
22+ |
56VFBGA (7.7x9) |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
24+ |
BGA |
60000 |
全新原装现货 |
|||
MICRON/美光 |
24+ |
NA |
20000 |
美光专营原装正品 |
|||
Micron Technology Inc. |
21+ |
96-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ST |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
2450+ |
BGA |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
2511 |
BGA |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/意法 |
24+ |
NA/ |
5192 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
micron(镁光) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
M58WR064HT规格书下载地址
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DdatasheetPDF页码索引
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