M29W160价格

参考价格:¥6.0120

型号:M29W160EB70N6E 品牌:MICRON 备注:这里有M29W160多少钱,2025年最近7天走势,今日出价,今日竞价,M29W160批发/采购报价,M29W160行情走势销售排行榜,M29W160报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M29W160

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M29W160产品属性

  • 类型

    描述

  • 型号

    M29W160

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

更新时间:2025-8-1 13:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TSOP48
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MICRON/镁光
24+
TSOP48
9600
原装现货,优势供应,支持实单!
MICRON/美光
24+
NA
20000
美光专营原装正品
MICRON/美光
24+
TSOP48
20000
郑重承诺只做原装进口现货
ST/意法
2404+
TSOP48
3300
现货正品原装,假一赔十
Micron Technology Inc.
21+
64-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
BGA
33
ST
23+
TSOP48
999999
原装正品现货量大可订货
ST
23+
TSSOP48
8560
受权代理!全新原装现货特价热卖!
ST/意法
24+
TSOP48
5070
全新原装,价格优势,原厂原包

M29W160芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SAMWHA
  • TRUMPOWER
  • WPI
  • YANGJIE

M29W160数据表相关新闻