M29W160价格

参考价格:¥6.0120

型号:M29W160EB70N6E 品牌:MICRON 备注:这里有M29W160多少钱,2024年最近7天走势,今日出价,今日竞价,M29W160批发/采购报价,M29W160行情走势销售排行榜,M29W160报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M29W160

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W160产品属性

  • 类型

    描述

  • 型号

    M29W160

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

更新时间:2024-4-18 17:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/镁光
23+
TSOP48
10000
原装现货欢迎查询库存变动长期可供应订货样品现货支
ST/意法
21+
BGA
15000
全新原装现货,假一赔十
ST/意法
23+
TSSOP-48
96880
只做原装,欢迎来电资询
micron/闀佸厜
22+
TSOP-48
3800
micron/镁光
23+
TSOP-48
30000
原装正品公司现货,假一赔十!
micron/镁光
21+
TSOP-48
10000
全新原装现货
MICORN
23+
TSOP48
20000
只做原装
micron/镁光
2023+
TSOP-48
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
ST
23+
TSOP
8795
ST
03+
10000

M29W160芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

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