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型号	功能描述	生产厂家&企业
M29W160DB	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160	16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M1	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M1E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M1F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M6	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M6E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M6F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70M6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N1	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N1E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N1F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N6	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N6E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N6F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70N6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA1	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA1E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA1F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA6	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA6E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA6F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB70ZA6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M1	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M1E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M1F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M6	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M6E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M6F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90M6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N1	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N1E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N1F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N6	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N6E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N6F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90N6T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA1	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA1E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA1F	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA1T	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA6	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M29W160DB90ZA6E	16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团

M29W160DB产品属性

类型
描述
型号
M29W160DB
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory

M29W160DB供应商更多...

更新时间：2025-7-31 15:42:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海鑫科润电子科技有限公司	M29W160DB90N1	ST	02+	TSOP	104	原装现货海量库存欢迎咨询	询价
深圳市近平电子有限公司	M29W160DB-90N6	ST	01+	SSOP-48	6000	绝对原装自己现货	询价
深圳市恒达亿科技有限公司	M29W160DB	ST	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
齐创科技(上海,北京,青岛)有限公司	M29W160DB-90N1	ST	23+	TSOP	5000	原装正品,假一罚十	询价
深圳市振宏微科技有限公司	M29W160DB70N6	STMICROELECTRONICS	23+	NA	2720	专做原装正品,假一罚百!	询价
深圳市欧立现代科技有限公司	M29W160DB70N1	ST	24+		12	原装现货,可开13%税票	询价
瀚佳科技(深圳)有限公司	M29W160DB-70N1	ST	24+	TSOP	35200	一级代理/放心采购	询价
上海磐岳电子有限公司	M29W160DB-90N6		2023+		5800	进口原装,现货热卖	询价
深圳市宇创芯科技有限公司	M29W160DB-90N6	ST/意法	24+	SSOP-48	9600	原装现货,优势供应,支持实单!	询价
深圳市英卓尔科技有限公司	M29W160DB90N6	ST	20+	TSOP	2960	诚信交易大量库存现货	询价

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M29W160DB规格书下载地址

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M29W160EB70N6F
M29W160EB70N6F，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-2-22
M29W160EB70N6E 假一罚十
只做原装正品，欢迎来电咨询！
2020-12-9
M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
M29W160EB70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18

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M29W160DB产品属性

M29W160DB供应商更多...

M29W160DB芯片相关品牌

M29W160DB规格书下载地址

M29W160DB参数引脚图相关

M29W160DB数据表相关新闻

M29W160EB70N6F

M29W160EB70N6E 假一罚十

M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W160EB70N6E顺德利科技正品原装进口稳定的货源优势的价格

DdatasheetPDF页码索引