型号 功能描述 生产厂家&企业 LOGO 操作
M29W160DB

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M29W160DB

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit2Mbx8or1Mbx16,BootBlockLowVoltageSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Bisa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

16Mbit(2Mbx8or1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29W160Disa16Mbit(2Mbx8or1Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamew

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M29W160DB产品属性

  • 类型

    描述

  • 型号

    M29W160DB

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory

更新时间:2024-4-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
NA/
813
优势代理渠道,原装正品,可全系列订货开增值税票
ST
23+
NA
20000
全新原装假一赔十
ST
2020+
TSOP
16800
绝对原装进口现货,假一赔十,价格优势!?
ST
23+
TSOP
20000
原厂原装正品现货
ST
23+
TSSOP
18000
STM
02+
TSSOP
576
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/STMicroelectronics/意法半导
21+
TSOP
1286
优势代理渠道,原装正品,可全系列订货开增值税票
ST
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
ST/意法
23+
TSOP
90000
只做原厂渠道价格优势可提供技术支持
ST
原厂原封
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规

M29W160DB芯片相关品牌

  • ANAREN
  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • Philips
  • WALSIN
  • WURTH

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