位置:M29W160DB70N6E > M29W160DB70N6E详情

M29W160DB70N6E中文资料

厂家型号

M29W160DB70N6E

文件大小

386.65Kbytes

页面数量

29

功能描述

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29W160DB70N6E数据手册规格书PDF详情

SUMMARY DESCRIPTION

The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION MODE

■ SECURITY MEMORY BLOCK

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160DT: 22C4h

– Bottom Device Code M29W160DB: 2249h

更新时间:2025-11-19 15:10:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TSOP
7736
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
23+
TSOP
16900
正规渠道,只有原装!
ST
25+
TSOP
16900
原装,请咨询
ST
2511
TSOP
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
标准封装
18000
原厂直接发货进口原装
ST
23+
BGA
5000
原装正品,假一罚十
ST
25+
BGA
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
25+
BGA
3200
全新原装、诚信经营、公司现货销售!
ST
24+
BGA
3000
公司存货
ST
16+
BGA
2500
进口原装现货/价格优势!