位置:M29W160DB70N1T > M29W160DB70N1T详情

M29W160DB70N1T中文资料

厂家型号

M29W160DB70N1T

文件大小

256.66Kbytes

页面数量

42

功能描述

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29W160DB70N1T数据手册规格书PDF详情

SUMMARY DESCRIPTION

The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION MODE

■ SECURITY MEMORY BLOCK

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160DT: 22C4h

– Bottom Device Code M29W160DB: 2249h

更新时间:2025-11-19 17:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
STMICROELECTRONICS
23+
NA
2720
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STMICROEL
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35930
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2447
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100500
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ST
23+
TSOP-48
8560
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ST
2015+
SOP/DIP
19889
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24+
3000
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ST
25+
TSOP
4500
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2023+
40000
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2023+
5800
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ST/Numony
2025+
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3615
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