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型号	功能描述	生产厂家企业	LOGO
M28W640	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA1	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA1E	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA1F	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA1T	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA6	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA6E	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA6F	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSB70ZA6T	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA1	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA1E	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA1F	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA1T	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA6	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA6E	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA6F	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA6T	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA1	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA1E	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA1F	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA1T	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA6	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA6E	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA6F	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU70ZA6T	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU-ZA	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU-ZAE	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU-ZAF	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FSU-ZAT	32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640FST70ZA6E	封装/外壳：64-TBGA 包装：管件描述：IC FLASH 64MBIT PARALLEL 64TBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
M28W640CB	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640CT	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640C-ZBT	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28W640ECB	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

M28W640FS产品属性

类型
描述
型号
M28W640FS
制造商
Micron Technology Inc
功能描述
PARALLEL NOR - Trays

M28W640FS供应商更多...

更新时间：2025-12-24 23:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英卓尔科技有限公司	M28W640ECB70N6	ST	20+	TSOP-48	2960	诚信交易大量库存现货	询价
上海意淼电子科技有限公司	M28W640CB90N6	ST	23+	TSOP48	20000	全新原装假一赔十	询价
中天科工半导体（深圳）有限公司	M28W640HCB70N6E	MICRON/美光	25+	N/A	12496	MICRON/美光原装正品M28W640HCB70N6E即刻询购立享优惠#长期有货	询价
千层芯半导体(深圳)有限公司	M28W640HCB70N6E	MICRON	24+	TSOP	5760	MICRON专营原装进口现货	询价
深圳市恒达亿科技有限公司	M28W640ECB70N6	ST	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市赛特兴科技有限公司	M28W640	ST	23+	原厂原封	16900	正规渠道,只有原装!	询价
深圳市赛美科科技有限公司	M28W640CB-90N6	ST		原厂封装	68500	一级代理原装正品假一罚十价格优势长期供货	询价
柒号芯城电子商务(深圳)有限公司	M28W640ECT70ZB6T	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市欧立现代科技有限公司	M28W640FST70ZA6	ST	24+	BGA	6310	全新原装现货,欢迎询购!!	询价
瀚佳科技(深圳)有限公司	M28W640FST70ZA6E	ST	24+	TBGA64	9700	绝对原装正品现货假一罚十	询价

M28W640FS芯片相关品牌

M28W640FS规格书下载地址

M28W640FS参数引脚图相关

M28W640FS数据表相关新闻

M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18

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M28W640FS产品属性

M28W640FS供应商更多...

M28W640FS芯片相关品牌

M28W640FS规格书下载地址

M28W640FS参数引脚图相关

M28W640FS数据表相关新闻

M28W160ECB70ZB6 ST/Micron

M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123

M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格

M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格

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