32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt