型号 功能描述 生产厂家 企业 LOGO 操作
M28W640FSB

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

STMICROELECTRONICS

意法半导体

M28W640FSB产品属性

  • 类型

    描述

  • 型号

    M28W640FSB

  • 制造商

    Micron Technology Inc

  • 功能描述

    PARALLEL NOR - Trays

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
1632
优势代理渠道,原装正品,可全系列订货开增值税票
ST
24+
SOP
6980
原装现货,可开13%税票
SST
原厂封装
9800
原装进口公司现货假一赔百
STMICROEL
23+
NA
1111
专做原装正品,假一罚百!
ST
23+
BGA
12800
公司只有原装 欢迎来电咨询。
ST
22+
BGA
12245
现货,原厂原装假一罚十!
ST/意法
2402+
BGA
8324
原装正品!实单价优!
ST
23+
BGA
6000
专业配单保证原装正品假一罚十
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
22+
BGA
20000
公司只做原装 品质保障

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