M28W640价格
参考价格：￥21.3208
型号：M28W640HCB70N6E 品牌：Micron 备注：这里有M28W640多少钱，2026年最近7天走势，今日出价，今日竞价，M28W640批发/采购报价，M28W640行情走势销售排行榜，M28W640报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W640 | 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 |   | |
M28W640 | 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | |
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | |
M28W640产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
64Mb （4M x 16）
- 写周期时间 - 字，页：
70ns
- 访问时间：
70ns
- 存储器接口：
并联
- 电压 - 电源：
2.7V ~ 3.6V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
48-TFSOP（0.724\，18.40mm 宽）
- 供应商器件封装：
48-TSOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICROELECTE |
26+ |
TBGA64 |
28000 |
原装正品价格优惠,长期优势供应 |
|||
MICRON |
24+ |
TSOP |
5760 |
MICRON专营原装进口现货 |
|||
ST |
24+ |
BGA |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MICRON/美光 |
25+ |
N/A |
12496 |
MICRON/美光原装正品M28W640HCB70N6E即刻询购立享优惠#长期有货 |
|||
ST/意法 |
2025+ |
BGA |
3500 |
原装进口价格优 请找坤融电子! |
|||
ST |
24+ |
TBGA64 |
9700 |
绝对原装正品现货假一罚十 |
|||
MICRON |
25+ |
TSOP48 |
3602 |
原装现货 |
|||
ST |
19+ |
BGA |
21238 |
||||
MICRON |
26+ |
TSOP48 |
360000 |
原装现货 |
|||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
M28W640芯片相关品牌
M28W640规格书下载地址
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- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160FB55N3E2
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M29DW323DT70ZE6E
- M29DW323DT70N6E
- M29DW323DB70ZE6E
- M29DW323DB70N6F
- M29DW323DB70N6E
- M29DW256G70ZA6E
- M29DW256G70NF6E
- M29DW128G70NF6E
- M29DW127G70NF6E
- M-299-WHT
- M295A601632
- M2954
- M2951
- M29504/5-4046
- M29504/4-4040
- M29504/14-4132
- M29504/05-4046
- M2950
- M293B1
- M293366
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640HST70ZA6E
- M28W640HCT70N6E
- M28W640HCB70N6E
- M28W320HSU70ZA6E
- M28W320HSB70ZA6E
- M28W320FCT70ZB6E
- M28W320FCB70ZB6E
- M28W320FCB70N6E
- M28W320ECT70ZB6T
- M28W320ECB70ZB6T
- M28W160ECT70ZB6E
- M28W160ECB70ZB6E
- M28W160CT70N6E
- M28W160CB70N6E
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S_15
- M28S_13
- M28S_11
- M28N-1
- M28LV64
- M28LV16
- M28F512
- M28F420
- M28F410
- M28F256
- M28F201
- M28F101
- M28F010
- M28876/1B1S1
- M28876/15-CD
- M28861/01-010TB
- M28840/3EW
- M28840/2BW
- M28840/1GW
- M28840/1EW
- M28840/1BW
- M28840/16AG1S1
M28W640数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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