Ultra miniature 4-pin small outline package

APPLICATIONS • Reed relay replacement • Meter reading systems • Medical equipment • Battery monitoring • Multiplexers FEATURES • Ultra miniature 4-pin small outline package • Low input control power consumption (3mA TYP) • 10 ohms maximum on-resistance • 60V load voltage rating • 125m

MOSFET Output SSRs

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Solid State Relay

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1 Form A Solid State Relay

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AVDVANCED 64K (8K x 8) UV ERASABLE PROM

Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

16K (2K x 8) UV ERASABLE PROM

16K (2K x 8) UV ERASABLE PROM

16K (2K x 8) UV ERASABLE PROM

16K (2K x 8) UV ERASABLE PROM

NMOS 128K 16K x 8 UV EPROM

AVDVANCED 64K (8K x 8) UV ERASABLE PROM

Solid State Relay

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2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

64K(8K x 8) UV ERASABLE PROMs

Bandpass Filter

2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY

2048-word x 8bit Erasable and Electrically Programmable Only Memory

MICROPROCESSOR & MEMORY CIRCUITS

Integrated Circuit NMOS, 16K UV Erasable PROM