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M27128A

AVDVANCED 64K (8K x 8) UV ERASABLE PROM

INTEL

英特尔

M27128A

Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

INTEL

英特尔

M27128A

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

M27128A

NMOS 128K 16K x 8 UV EPROM

STMICROELECTRONICS

意法半导体

M27128A

AVDVANCED 64K (8K x 8) UV ERASABLE PROM

INTEL

英特尔

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

STMICROELECTRONICS

意法半导体

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

STMICROELECTRONICS

意法半导体

Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

INTEL

英特尔

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

Advanced 128K(16 x 8) UV Erasable PROM

Advanced 128K(16 x 8) UV Erasable PROM

INTEL

英特尔

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

NMOS 16K 2K x 8 UV EPROM

DESCRIPTION The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transpar

STMICROELECTRONICS

意法半导体

NMOS 128K 16K x 8 UV EPROM

DESCRIPTION The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

STMICROELECTRONICS

意法半导体

64K(8K x 8) UV ERASABLE PROMs

INTEL

英特尔

M27128A产品属性

  • 类型

    描述

  • 型号

    M27128A

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    NMOS 128K 16K x 8 UV EPROM

更新时间:2026-7-23 18:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
00+
DIP28
1785
全新原装进口自己库存优势
ST/SGS
24+/25+
769
原装正品现货库存价优
ST/意法
25+
DIP-28
32360
ST/意法全新特价M27128A-2F1即刻询购立享优惠#长期有货
ST
24+
DIP28
7850
只做原装正品现货或订货假一赔十!
ST
25+
DIP
20000
原装
ST/意法
23+
DIP
5500
主营品牌深圳百分百原装现货假一罚十绝对价优
ST
24+
DIP
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
ST
17+
DIP-28
60000
保证进口原装可开17%增值税发票
ST
22+
DIP
12245
现货,原厂原装假一罚十!
68
FDIP28
38
92

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