C16x Family of Siemens 16-Bit CMOS Single-Chip Microcontrollers

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C16x Family of Siemens 16-Bit CMOS Single-Chip Microcontrollers

TO-3P 16A Triac

■Features ●Repetitive peak off-state voltage: VDRM=400, 600V ●RMS on-state current: IT(RMS)=16A ●Gate trigger current: IGT=30mA max (MODE , , )

TO-220F 16A Triac

■ Features ● Repetitive peak off-state voltage: VDRM=400, 600V ● RMS on-state current: IT(RMS)=16A ● Gate trigger current: IGT=30mA max (MODE I, II, III) ● Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) ● UL approved type available

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description\nThe M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions fea • Memory capacity..................................ROM (See Figure 1.1.3. ROM Expansion)\n                                              RAM 3K to 20K bytes\n• Shortest instruction execution time ......62.5ns (f(XIN)=16MHZ, VCC=5V)\n           100ns (f(XIN)=10MHZ, VCC=3V, with software one-wait) : Ma;

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description\nThe M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions fea • Memory capacity..................................ROM (See Figure 1.1.3. ROM Expansion)\n• Shortest instruction execution time ......62.5ns (f(XIN)=16MHZ, VCC=5V)\n• Supply voltage .....................................4.2V to 5.5V (f(XIN)=16MHZ, without software wait) : Mask ROM, flash memory 5V ve;

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/62A (80-pin version) group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions

包装：散装 描述：METRIC ROUND SWAGE STANDOFFPLAIN 五金件，紧固件，配件 板垫片，支座

包装：散装 描述：METRIC ROUND SWAGE STANDOFFPLAIN 五金件，紧固件，配件 板垫片，支座

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

5x7 mm, 5.0 Volt, HCMOS/TTL, Clock Oscillator

文件：274.27 Kbytes Page：2 Pages

Silicon MOS IC

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)