包装：散装 描述：METRIC ROUND SWAGE STANDOFFPLAIN 五金件，紧固件，配件 板垫片，支座

包装：散装 描述：METRIC ROUND SWAGE STANDOFFPLAIN 五金件，紧固件，配件 板垫片，支座

PASSIVE GPS GLONASS GALILEO ANTENNA

文件：303.5 Kbytes Page：2 Pages

GPS/BEIDOU/GLONASS PASSIVE ANTENNA

文件：1.14057 Mbytes Page：5 Pages

GPS/BEIDOU/GLONASS PASSIVE ANTENNA

文件：1.18009 Mbytes Page：5 Pages

快速恢复 - 平板型

快速恢复 - 平板型

快速恢复 - 平板型

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages