位置：首页 > IC中文资料第12898页 > LP1500
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LP1500 | 1W POWER PHEMT DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure | FILTRONIC |   | |
LP1500 | 1W POWER PHEMT | FILTRONIC | | |
PACKAGED 1W POWER PHEMT DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed | FILTRONIC | | ||
Low Noise, High Linearity Packaged PHEMT DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g | FILTRONIC | | ||
Low Noise, High Linearity Packaged PHEMT DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g | FILTRONIC | | ||
Low Noise, High Linearity Packaged PHEMT DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g | FILTRONIC | | ||
Low Noise, High Linearity Packaged PHEMT DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g | FILTRONIC | | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mmx1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recesse | FILTRONIC | | ||
PACKAGED 1W POWER PHEMT | FILTRONIC | | ||
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LP1500产品属性
- 类型
描述
- 型号
LP1500
- 制造商
FILTRONIC
- 制造商全称
FILTRONIC
- 功能描述
1W POWER PHEMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FILTRONIC |
18+ |
SOT-89 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FILTRONIC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
FILTRONIC |
24+ |
SOT89 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NS/TI |
25+23+ |
SOT-89 |
42220 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FILTRONIC |
2018+ |
SOT89 |
2824 |
||||
FILTRONIC |
17+ |
SOT-89 |
6200 |
100%原装正品现货 |
|||
FILTRONIC |
25+ |
SOT89 |
860000 |
明嘉莱只做原装正品现货 |
|||
FILTRONIC |
23+ |
SOT-89 |
20000 |
原装正品,假一罚十 |
|||
FILTRONIC |
24+ |
SOT89 |
11736 |
||||
FILTRONIC |
19+ |
SOT89 |
20000 |
35734 |
LP1500规格书下载地址
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LP1500数据表相关新闻
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LP2950和LP2951的是微功率稳压器，它是专为保持一个非常适当的规管低输入至输出电压差。这些器件具有非常低静态偏置75毫安的电流，并且是有能力提供在100 mA的输出电流超过。内部电流和热限流保护功能。而LP2951有三个附加功能。首先是错误输出，可用于信号的外部电路出监管条件，或作为复位微处理器上电。该第二个功能允许输出电压预设为5.0 V，3.3 V或3.0 V输出（取决于版本）或1.25 V编程至29日五，它包括直接与一个固定出电阻分压器进入误差放大器的反馈输入。第三个特点是关断输入，允许逻辑电平信号，关闭或开启稳压器输出。由于低输入至输出电压差和偏置电流规格，这些设备非常适合于电
2013-1-20
DdatasheetPDF页码索引
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