DESCRIPTION AND APPLICATIONS

The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications.

FEATURES

¨ 31.5 dBm Output Power at 1-dB Compression at 18 GHz

¨ 8 dB Power Gain at 18 GHz

¨ 28 dBm Output Power at 1-dB Compression at 3.3V

¨ 45dBm Output IP3 at 18GHz

¨ 50 Power-Added Efficiency