DESCRIPTION AND APPLICATIONS

The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.

FEATURES

¨ 31dBm Output Power at 1-dB Compression at 15 GHz

¨ 9 dB Power Gain at 15 GHz

¨ 42 dBm Output IP3 at 15GHz

¨ 60 Power-Added Efficiency