Bluetooth® 5 Dual Mode Audio Module

The LM746 is an extremely versatile and cost effective Bluetooth® 5 compliant solution, enabling audio data to be wirelessly communicated between audio devices, using a Bluetooth® and Bluetooth low energy connection. It’s sound enhancement features make it a perfect fit within your premium audio dev

LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Maximum reverse voltage of 45 V • No Positive Voltage limitation to Anode Terminal • Charge Pump Gate Dri

丝印代码：ZDSK；LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Maximum reverse voltage of 45 V • No Positive Voltage limitation to Anode Terminal • Charge Pump Gate Dri

丝印代码：ZDSK；LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Maximum reverse voltage of 45 V • No Positive Voltage limitation to Anode Terminal • Charge Pump Gate Dri

丝印代码：ZDSK；LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Maximum reverse voltage of 45 V • No Positive Voltage limitation to Anode Terminal • Charge Pump Gate Dri

丝印代码：ZDSK；LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Maximum reverse voltage of 45 V • No Positive Voltage limitation to Anode Terminal • Charge Pump Gate Dri

LM74670-Q1 Zero IQ Smart Diode Rectifier Controller

1 Features 1• AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Peak Input AC Voltage: 42 V • Zero IQ • Charge Pump Gate Driv

具有 70uA 栅极驱动器的 0.48V 至 42V、零 IQ 汽车理想二极管整流器控制器

LM74670-Q1 是一种控制器器件，可在交流发电机的全桥或半桥整流器架构中与 N 通道 MOSFET 搭配使用。它旨在驱动外部 MOSFET 以模拟理想二极管。此方案独一无二的优势在于其并无接地基准，因此其具有零 IQ。采用全桥或半桥整流器和交流发电机的肖特基二极管可以替换为 LM74670-Q1 解决方案，以避免正向导电二极管损耗并使交流/直流转换器更加高效。 \n\nLM74670-Q1 控制器为外部 N 通道 MOSFET 提供栅极驱动，并配有快速响应内部比较器，可使 MOSFET 栅极在反极性情况下放电。此器件支持频率高达 300Hz 的交流信号。 • 符合 AEC-Q100 标准，其中包括以下内容： \n• 器件温度 1 级：-40℃ 至 +125℃ 的环境工作温度范围 \n• 超出人体模型 (HBM) 静电放电 (ESD) 分类等级 2\n• 器件充电器件模型 (CDM) ESD 分类等级 C4B\n \n• 峰值输入交流电压：42V\n• 零 IQ\n• 适用于外部 N 通道 MOSFET 的电荷泵栅极驱动器\n• 与肖特基二极管相比，正向压降和功耗更低 \n• 能够处理频率高达 300Hz 的交流信号;

丝印代码：ZGPK；LM74670-Q1 Zero IQ Smart Diode Rectifier Controller

1 Features 1• AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Peak Input AC Voltage: 42 V • Zero IQ • Charge Pump Gate Driv

丝印代码：ZGPK；LM74670-Q1 Zero IQ Smart Diode Rectifier Controller

1 Features 1• AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Peak Input AC Voltage: 42 V • Zero IQ • Charge Pump Gate Driv

丝印代码：ZGPK；LM74670-Q1 Zero IQ Smart Diode Rectifier Controller

1 Features 1• AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Peak Input AC Voltage: 42 V • Zero IQ • Charge Pump Gate Driv

丝印代码：ZGPK；LM74670-Q1 Zero IQ Smart Diode Rectifier Controller

1 Features 1• AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B • Peak Input AC Voltage: 42 V • Zero IQ • Charge Pump Gate Driv

LM74680 Ideal Diode Bridge Controller for Low Loss Rectification

1 Features • Input operating voltage range: 5V to 80V – 100V absolute maximum • 4× integrated gate drive control • 165μA gate pull-up strength • 100mA gate pull-down strength • Linear gate regulation control for supply ORing applications – VTG_REG = 11mV • Enable pin for user-controlled d

用于低损耗整流的 100V 理想二极管桥控制器

The LM74680 is an ideal diode bridge controller that provides voltage rectification by driving four N-channel MOSFETs in a full-bridge configuration. LM74680 enables lower voltage drop and reduced power dissipation as compared to conventional diode bridge rectifiers. This helps to simplify the power Input operating voltage range: 5V to 80V \n \n100V absolute maximum\n \n\n \n4× integrated gate drive control\n \n165µA gate pull-up strength\n \n100mA gate pull-down strength\n \nLinear gate regulation control for supply ORing applications \n \nVTG_REG = 11mV\n \n\n \nEnable pin for user-controlled;

丝印代码：L74680；LM74680 Ideal Diode Bridge Controller for Low Loss Rectification

1 Features • Input operating voltage range: 5V to 80V – 100V absolute maximum • 4× integrated gate drive control • 165μA gate pull-up strength • 100mA gate pull-down strength • Linear gate regulation control for supply ORing applications – VTG_REG = 11mV • Enable pin for user-controlled d

LM74681 100V Ideal Diode Bridge Controller for PoE Powered Applications

1 Features • Input operating voltage range: 30V to 90V – 100V absolute maximum • 4× integrated gate drive control • 165μA gate pull-up strength • 100mA gate pull-down strength • Ultra-low quiescent current of 0.27μA during detection and classification phase (VIN1-IN2

丝印代码：L74681；LM74681 100V Ideal Diode Bridge Controller for PoE Powered Applications

1 Features • Input operating voltage range: 30V to 90V – 100V absolute maximum • 4× integrated gate drive control • 165μA gate pull-up strength • 100mA gate pull-down strength • Ultra-low quiescent current of 0.27μA during detection and classification phase (VIN1-IN2

Zero IQ Reverse Polarity Protection Smart Diode Controller

文件：1.41797 Mbytes Page：30 Pages

Zero IQ Reverse Polarity Protection Smart Diode Controller

文件：1.41797 Mbytes Page：30 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SMART DIODE CTLR 8VSSOP 集成电路（IC） OR 控制器，理想二极管

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC SMART DIODE CTLR 8VSSOP 集成电路（IC） OR 控制器，理想二极管

Zero IQ Reverse Polarity Protection Smart Diode Controller

文件：1.41797 Mbytes Page：30 Pages

Zero IQ Smart Diode Rectifier Controller

文件：1.31461 Mbytes Page：26 Pages

Zero IQ Smart Diode Rectifier Controller

文件：1.31461 Mbytes Page：26 Pages

Zero IQ Smart Diode Rectifier Controller

文件：1.31461 Mbytes Page：26 Pages

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

Integrated Circuit TV Video IF Amplifier

Description: The NTE746 is a monolithic integrated circuit in an 8–Lead DIP type package with wide–range AGC for replacement of 1st and 2nd IF stages in solid–state color and black and white TV sets. It will directly drive a 3rd IF stage. Features: • Center Frequency: FO = 45MHz • Ba

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitan

Television Chroma System

Integrated Circuit Chroma Demod