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LM74670QDGKTQ1.B中文资料
LM74670QDGKTQ1.B数据手册规格书PDF详情
1 Features
1• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Exceeds HBM ESD Classification Level 2
– Device CDM ESD Classification Level C4B
• Peak Input AC Voltage: 42 V
• Zero IQ
• Charge Pump Gate Driver for external N-Channel
MOSFET
• Low Forward-Voltage Drop and Less Power
Dissipation Compared to Schottky Diode
• Capable of handling AC signal up to 300-Hz
Frequency
2 Applications
• AC Rectifier
• Alternator
• Power Tools
• Reverse Polarity Protection
3 Description
The LM74670-Q1 is a controller device that can be
used with an N-Channel MOSFET in full or half
bridge rectifier architectures for alternators. It is
designed to drive an external MOSFET to emulate an
ideal diode. A unique advantage of this scheme is
that it is not ground referenced, thus it has zero IQ.
The schottky diodes in full or half bridge rectifiers and
alternators can be replaced with the LM74670-Q1
solution to avoid forward conduction diode losses and
produce more efficient AC-DC converters.
The LM74670-Q1 controller provides a gate drive for
external N-Channel MOSFET and a fast response
internal comparator to pull-down the MOSFET Gate
in the event of reverse polarity. This device can
support an AC signal frequency up to 300Hz.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
VSSOP-8 |
50000 |
全新原装正品现货,支持订货 |
|||
TI/德州仪器 |
24+ |
VSSOP-8 |
60000 |
||||
TI |
24+ |
SMD |
17900 |
电源管理IC开发工具 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
TI |
23+ |
N/A |
7000 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
11000 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
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